The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Investigation of total ionizing dose influence on the main single event effect types are presented. The devices under test are ADUM1200 (SEL), 8-bit shift register (SEL), SRAMs K6R4016C1D and K6R4016V1D (SEL, SEU), ATMEGA128 (SEL, SEU), LM124 (SET) and IRF3710 (SEB) were studied.
In this paper the comparison of the temperature distribution obtained using Dual-Phase-Lag heat transfer and Fourier-Kirchhoff models will be presented. Artificial Intelligence algorithms, including modified versions of Artificial Bee Colony and Ant Colony algorithms, are employed to obtain the chosen thermal parameter values of the Dual-Phase-Lag model. The simple structure made of the polysilicon,...
An overview of the state-of-the art of the ongoing research on high-k gate dielectrics for the advanced nano-CMOS technology is presented. The most promising high-k candidates for next-generation MOS devices are highlighted. The associated performance degradation and the scaling limitations of these high-k materials are also discussed and emerging solutions and optimization schemes for the subnanometer...
Continuous miniaturization of semiconductor devices has been the main driver behind the outstanding increase of speed and performance of integrated circuits. In addition to a harmful active power penalty, small device dimensions result in rapidly rising leakages and fast growing stand-by power. The critical high power consumption becomes incompatible with the global demands to sustain and accelerate...
This paper reviews the advantages and the current status of commercially available SiC power MOSFETs, followed by an analysis of future trends and the potential for future development. Specifically, the review shows the advantages of the recently commercialized trench MOSFET structure and the potential for integration with SiC Schottky diodes to create fast MOSFETs. The current issues and the potential...
Graphene is a carbon allotrope in which the atoms are arranged in a two-dimensional honeycomb lattice, which comprises two hexagonal sublattices. The existence of these two sublattices gives rise to the electron pseudospin and, along with the overlapping pz orbitals, to the absence of back-scattering, which give to graphene high-quality transport properties. Graphene is a gapless material and currents...
Photovoltaic devices as large-area semiconductor devices are macroelectronic devices, however, solar cells include nanostructures and/or nanomaterials to boost the conversion efficiency of the devices. In this contributions we focus on nanotextures which play an important role in increasing optical performance of solar cells. We present a method of nanotexture fabrication for PV applications based...
This paper presents state of the art split drain current magnetic sensors fully compatible with the bulk silicon and SOI technology. While lateral double-diffused magnetic sensitive MOSFET with integrated n-type Hall plate exhibits an order of magnitude higher relative current magnetic sensitivity compering with the conventional split drain silicon MagFETs, novel dual-gate four-terminal magnetic sensor...
Conventional text-based information communications may cause misunderstanding particularly in case of a dialog between different generations, gender or cultural background. Intelligent communications may solve these problems by the aid of “happiness sensor” and retrieving additional information of personal record of the counterparts. Breakthroughs necessary to realize the intelligent communications...
The single event transients (SETs) are a common source of malfunction in nano-scale CMOS integrated circuits. For this reason, evaluation of the SET effects and application of appropriate measures for their mitigation are fundamental tasks in the design of advanced radiation hardened integrated circuits. In general, SET analysis is based on the multi-scale modeling and simulation approach comprising...
The nonlinear electromagnetic (EM) phenomena in terahertz (THz) range in the crystalline SrTiO3 are investigated theoretically. The goal is to investigate possibilities of the forming of short THz EM pulses. The moderate cooling T ≈ 77 K is considered. The self-action of input long envelope and baseband pulses leads to the modulation instability due to the cubic nonlinearity and frequency dispersion...
The paper presents the results of the analysis which was made in attempt to generalize the main single event latchup (SEL) sensitivity parameters such as saturation cross-section and the threshold LET for digital CMOS ICs. We analyzed SEL ion beam tests results for digital CMOS ICs of various functionality and obtained that for most ICs the SEL saturation cross-section may be determined in the relation...
Approximate ripple carry adders (RCAs) and carry lookahead adders (CLAs) are presented which are compared with accurate RCAs and CLAs for performing a 32-bit addition. The accurate and approximate RCAs and CLAs are implemented using a 32/28nm CMOS process. Approximations ranging from 4- to 20-bits are considered for the less significant adder bit positions. The simulation results show that approximate...
Wireless sensor networks (WSNs) include a large number of distributed sensor nodes that consist of sensor, microcontroller and transceiver block. As the main source of energy sensor nodes usually use non-rechargeable batteries, so that the stored energy is a very important resource of a WSN. The main goal of this paper is estimating the battery lifetime of a sensor node in respect to the usage pattern...
The paper describes the dependence of the SEU cross-section on the clock frequency for a CMOS 0.18um microprocessor's test chip. An attempt has been made to find the relationship between the parameter of the minimum supply voltage and the frequency dependence of the SEU. Original experimental results are obtained.
The technique of flip-chip ICs SEE testing based on a joint use of focused laser facility and heavy ions with medium range of 100 μm … 200 μm is presented.
In this paper the electrical and trapping characteristics of multilayer HfO2/Al2O3 dielectric stacks on silicon as a potential device for flash memory applications were investigated. Trapping phenomena have been studied by evaluating the memory window, i.e. the flat-band voltage shift of high frequency C-V curves after application of series of positive and negative voltages. The influence of post-deposition...
The aim of this work was the fabrication of Nd2Fe14B submicron size particles starting from very coarse-grained hydrogen decrepitated (HD) material. Surfactant-assisted high-energy ball milling (SAHEBM) with WC milling balls and bowl was employed for obtaining magnetic powder with optimum characteristics for further magnet processing.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.