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A soft contact-lens amperometric glucose sensor as novel non-invasive device of body sensor network was fabricated and tested. Also, the sensor was utilized to tear glucose monitoring. The sensor was constructed by immobilizing GOD onto a flexible oxygen electrode, which was fabricated using “Soft-MEMS” techniques onto a functional polymer membrane. In purpose of bioinstrumentation, adhesive agents...
The electrical performance and reliability of a through-silicon via is investigated through two-dimensional and three-dimensional simulations. Due to the large differences in material thicknesses present in the structures, a 3D simulation is often not feasible. The thermo-mechanical stress, the electrical parameters including TSV resistance and capacitance, as well as the electromigration-induced...
We have realized the full-scale whole device EMC/MD simulation including source and drain regions by utilizing graphic processing unit. The transfer characteristic of a gate-all-around nanowire Si MOSFET is simulated by reproducing the field effect of the surrounding gate electrode with spreading charged particles on the gate insulator layer. We have found an appreciable impact of the random dopant...
We describe a technique to overcome the numerical difficulties in the accurate description of the small signal AC response of the thin electrical double layers at the surface of impedimetric biosensor electrodes. The technique significantly reduces the computational burden of the calculation, thus enabling the fast simulation of many analyte configurations.
Soft error simulations utilizing PHYSERD are presented. The comparison with the experimental data for 28 nm SRAM demonstrates that PHYSERD provides the high-accuracy estimation of soft error rate when combined with circuit simulation, while PHYSERD alone tends to overestimate soft error rate. We also analyze the contributions of transistors constituting SRAM and of secondary ions to soft error rate...
Improvements in electrostatic channel control allow FinFETs and trigate FETs to extend Moore's law down to gate lengths of 15–20nm. Further scaling may require the better control that is provided by multigate devices. Using multigate FET architectures, gate length scaling down to 5 and 3 nm has been demonstrated experimentally and theoretically, respectively. At these dimensions, quantum confinement...
The paper presents a method for quantum transport simulations in nanowire (NW) MOSFETs with inelastic scattering processes incorporated. An atomistic tight-binding Hamiltonian with realistic electron-phonon interaction is transformed into an equivalent low-dimensional transport model which can be easily used in full-scaled NEGF simulations. The utility of the method is demonstrated by computing IV...
Spin-resolved conductivities in magnetic tunnel junctions are calculated using a semiempirical tight-binding model and non-equilibrium Green's functions. The performance of half-metallic electrodes is studied by comparing conventional Fe-MgO-Fe structures to Co2FeAl-MgO-Co2FeAl structures. The results show higher tunneling magnetoresistance and resistance-area product for Co2FeAl devices across a...
In this paper, we discuss how to implement the self heating and aging models with TMI. Various examples about self heating and aging simulations with TMI methodology are shown in this paper. Without trading-off the accuracy, the one with proposed TMI approach for self heating simulations takes much shorter simulation time.
Recently, we proposed a non-volatile magnetic flip flop featuring a very small footprint. We studied its operational limits and current dependent characteristics. Since flip flops are commonly operated by clocked signals, their operation is time critical and the knowledge and understanding of their switching behavior is essential. In this work we study the dependence of the proposed flip flop on its...
It has been proposed that superfluid excitonic condensates may be possible in dielectrically separated graphene layers or other two-dimensional materials. This possibility was the basis for the proposed ultra-low power Bilayer pseudoSpin Field-effect Transistor (BiSFET). Previously, we developed an atomistic tight-binding quantum transport simulator, including the non-local exchange interaction, and...
Sensitivity of Phosphorus dopant placement to the channel size of highly doped silicon nanowires is studied using a 10-band sp3 d5 s∗ tight-binding approach coupled to self-consistent simulations. Extending the simulation scope to realistically sized nanowires, we observed that uniform doping does not necessarily reduce the channel energy compared to surface-oriented doping when the diameter of a...
Effects of the diameter on the drain current of uniaxially strained Si nanowire (NW) MOSFETs are investigated. Based on the deterministic solution of the multi-subband Boltzmann transport equation, the drain current is calculated considering the intravalley acoustic phonon scatterings, intervalley phonon scatterings and interface roughness scatterings. We found 3 nm diameter [110] oriented Si NW MOSFETs...
The mechanical and electrical properties of solder bumps influence the overall reliability of 3D ICs. A characteristic of solder bumps is that during technology processing and usage their material composition changes. This compositional transformation is enhanced by electromigration and leads to the formation of voids which can cause a complete failure of a solder bump. In this paper we present a...
Among the alloys of Group IV semiconductors the Germanium-Tin (GeSn) alloy is particularly interesting as it exhibits a small and direct band gap for a certain range of Sn content [1]. This feature can be exploited for highperformance tunnel FET (TFET) application [2], [3]. The small direct band gap enhances the band-to-band-tunneling (BTBT) rate which results in a high on-current. In order to reduce...
We present a three-dimensional semi-classical ensemble Monte Carlo device simulator with novel quantum corrections. The simulator includes a beyond-Fermi treatment of Pauli-Exclusion-blocked scattering, and a valley-dependent treatment of various quantum confinement effects. Quantum corrections to the potential are used not only to model redistribution of carriers in real space, but also to model...
In this paper, a comprehensive investigation of quantum transport in nanoscaled gallium nitride (GaN) high electron mobility transistors (HEMTs) is presented. A simulation model for quantum transport in nanodevices on unstructured grids in arbitrary dimension and for arbitrary crystal directions has been developed. The model has been implemented as part of the Vienna-Schrödinger-Poisson simulation...
A consistent thermoelectroelastic description of piezoelectric semiconductors with finite deformation is presented. By including both kinematic and constitutive nonlinearities as well as a proper treatment of the electrostatic conditions at free surfaces, the theory allows situations with large strains to be modeled more accurately. In addition, the theory is rotationally invariant unlike the linear...
A thermal simulation module, based on the solution of the coupled Heat Flow, Poisson, and Current Continuity Equations, has been developed and implemented in the ‘atomistic’ simulator GARAND to investigate the impact of self heating on FinFET DC operation. A progressive study of coupled electro-thermal simulation for FinFETs is presented. A new approximate formula for the reduced thermal conductivity...
In this paper, we have proposed a computationally efficient method to evaluate threshold voltage (VT) variability due to Line Edge Roughness (LER) in sub-20nm node FinFETs. For channel lengths less than 15 nm, the variability in threshold voltage may be estimated to a great accuracy (error < 10%) with a decrease in computation time of over 300×. The method thus proposed provides a fast and accurate...
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