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As today's 28nm FDSOI technology is at the industrialization level, this paper aims to summarize the key advantages allowed by the thin BOX (Buried Oxide) of the FDSOI, through the technology evolution but also through new opportunities, wider than logic applications and extending the possibility offered by the technology.
A recursive model for the quasi-static current-voltage (I-V) characteristic of voltage-driven bipolar resistive RAM (RRAM) devices is reported. The model is based on the Krasnosel'skiĩ-Pokrovskiĩ hysteresis operator and accounts for the sequential creation and destruction of conductive channels spanning the dielectric film. It is shown in this work how the basic model formulation can be upgraded so...
In this paper we investigate the drain stress behavior and charge trapping phenomena of GaN-based high electron mobility transistors (HEMTs). We fabricated GaN-on-Si MIS-HEMTs with different dielectric stacks in the gate and gate drain access region and performed interface characterization and stress measurements for slow traps analysis. Our results show a high dependency of the on-resistance increase...
This paper reports on the technology and design aspects of an industrial DHEMT process for 650V rated GaN-on-Si power devices, using an in-situ MOCVD grown SiN as surface passivation and gate dielectric, with low interface state density and excellent TDDB. Optimization of the GaN epi stack results in very low off-state leakage (<10nA/mm). Due to the reduction of buffer trapping, low dynamic Ron...
AlGaN/GaN-based fin-shaped field-effect transistors (FinFETs) with very steep sidewall and various fin-widths (Wfin) have been fabricated by utilizing electron-beam lithography and additional anisotropic sidewall wet etch in tetramethyl ammonium hydroxide (TMAH) solution. The device with Wfin of 180 nm exhibits normally-on performance with threshold voltage of −3.5 V and extremely broad transconductance...
This paper reports the fabrication method and electrical characterization results of the first-ever demonstrated high voltage AlGaN/GaN HEMTs on CVD diamond substrate. Fabricated circular GaN-on-Diamond HEMTs with gate-to-drain drift length of 17 μm and source field plate length of 3 μm show an off-state breakdown voltage of ∼ 1100V. Temperature characterization of Capacitance voltage characteristics...
In this paper an energy-autonomous fully integrated photovoltaic driven harvesting solution for wireless sensor node applications is proposed. Photo diodes in parallel connection are used as on-chip micro solar cells. In order to provide the highest efficiency for ambient harvesting purposes, the n-well to p-substrate junction, which gives a negative voltage related to the p-substrate, is used. A...
In this paper we engineer the programming method at 10μA in Cu/Al2O3-based CBRAM to reduce the bit dispersion and the state instability over time. Despite its large median value, the overall HRS/LRS ratio in these devices can be drastically reduced due to the LRS and HRS dispersion, especially in a low-current regime. For this reason, in this study we adopt a statistical approach, focusing on the...
Schottky barrier diodes (SBD) were integrated in a 0.25 /m SiGe BiCMOS technology. The SBDs were realized without additional process steps using the titanium silicide (TiSi) phase of the standard contact formation for the anode Schottky barrier. We observe a specific parameter degradation after reverse anode voltage operation. Different parameters as series resistance Rs, forward and leakage currents...
In this paper we engineer a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf Oxide Resistive Random Access Memory (OxRRAM) device for fast switching at low operation current without sacrificing the retention and endurance properties. The integrated 40nm × 40nm cell switches at 10μA using write pulses shorter than 100ns (resp. 1us) for RESET (resp. SET) and with amplitude <2V. Using these conditions in a verify algorithm,...
Helium-3 ion irradiation technique is proposed to improve silicon substrate noise isolation by creating a local semi-insulated region with a resistivity over 1kΩ-cm in low-resistive silicon substrate. Noise isolation is improved about 10dB at 2GHz after helium-3 ion irradiation in a 180-nm CMOS process. A 90% noise reduction has been achieved in the measurement results for test structures with guard...
In this contribution a full-quantum simulation of the electron transport in the two-dimensional electron gas (2DEG) of a AlGaN/GaN heterostructure is carried out using the non-equilibrium Green function (NEGF) approach. Even if electrical and mechanical properties of a AlGaN/GaN heterojunction are now well understood, a host of techniques like thinning of layers as in gate recess, use of advance materials...
We investigate, how linear or weakly nonlinear oscillatory systems (coupled nanoscale oscillators and propagating spin-waves) can be used as non-Boolean computing systems. We study two model systems: nearest-neighbor connected harmonic oscillators and propagating spin-waves. We argue that these systems may realize efficient co-processors for some demanding applications (image processing, associative...
We present the main process steps in FinFET technologies in the 14/16nm nodes that shape the designer's work and discuss their implications at the Physical IP level. The document is particularly focused on the impact of the devices and the back-end-of-line on standard cell architectures.
This paper presents an efficient compact model of a single nanomagnet implemented in Verilog-A. A single magnet is the key element of nanomagnetic logic systems. Two field coupled nanomagnets act as a magnetic inverter. To verify the model, a circuit consisting of five such single magnets in a loop is simulated and the results are compared to an experiment on an fabricated inverter chain. To reproduce...
Charge trapping phenomena at interfaces of GaN-based semiconductors with a dielectric are one of the major concerns in modern MIS-HEMT technologies. Fundamental questions about the nature and the behavior of interface defects must still be answered. We address these questions by investigating devices with and without an AlGaN layer at the the interface with the dielectric, using MIS capacitor test...
This paper presents a type of plasmonic circuit that is monolithically integrated with electronic devices on a silicon substrate and discusses the concept behind this circuit. Surface plasmon waveguides and detectors are integrated with metal-oxide-semiconductor field-effect transistors (MOSFETs) on the substrate. In the circuits, surface plasmon signals are generated by light at a wavelength at which...
High performance 20nm-node PCRAM cell switching was successfully realized with the remarkable Ion/Ioff characteristics employing low aspect ratio poly PN diode on metal. Nice Ion/Ioff ratio was obtained by modifying stack of diode adopted in-situ boron-doped poly SiGe and thermal optimization with spike RTA. Basically, boron has high solubility and activation rate in SiGe matrix. In-situ boron-doped...
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