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Various RRAM concepts are currently being investigated (Oxide based RAM, Conductive Bridge RAM), all showing pros and cons depending on the architecture and memory stack. As the specifications are strongly application-dependent, it is likely that the RRAM technology will be bound to a specific market segment. In this paper, we discuss the potential of RRAM for non-volatile memory applications, among...
Emerging Internet-of-Things (IOT) demands an energy-efficient network of smart nodes. These devices need to be always-on, always-aware, and always-connected, despite the fact that their active duty cycles are low. Limited by intrinsic memory attributes, present IOT systems rely both on a nonvolatile storage and on a volatile working memory simultaneously. A unified memory subsystem, built on embedded...
Low temperature a-SiGeC thin film photovoltaic (TFPV) ambient light-energy harvesters monolithically integrated with high performance 3D sequentially stackable device were demonstrated in this article. The 3D stackable device with threshold voltage engineering and driving current boosting technologies enable excellent current controllability to achieve low Ioff and high Ion operation condition for...
The wide band-gap a-IGZO is a promising channel material to realize high-voltage transistors that can be easily integrated on logic ICs by low-temperature 3D stacking. This monolithic 3D integration would enable on-chip power management to improve power consumption and integration density. We report a high-voltage a-IGZO TFT with the high-k Al2O3 gate dielectric. By using a low-temperature process...
Metal oxide semiconductor field effect transistors (MOSFETs) are diverging from the exclusive use of silicon and germanium to the employment of compound semiconductors such as SiGe and InGaAs to further increase transistor performance. A broader range of channel materials allowing better carrier confinement and higher mobility could be employed if a universal control monolayer (UCM) could be ALD or...
The electron concentration of 3×1020 cm−3 in phosphorus-doped Ge is obtained by in-situ chemical vapor deposition doping and laser annealing. The laser annealing effectively improve the crystallinity in the Ge layer. The pulse laser not only activates the phosphorus, but also produces the biaxial tensile strain. With the nickel germanide contact, the contact resistivity is as low as 1.5×10−8 Ω-cm2...
We demonstrate InGaZnO (IGZO) TFTs with channel-length (L) tunable Vth for high-gain BEOL logic gate inverters in a unique film-profile engineering (FPE) approach. In this FPE scheme the thickness and film profile of gate oxide and IGZO active layer are directly tailored by L (0.4–0.8 μm) in a single step, leading to a wide-ranging tunability in Vth of −0.2–+1.6V at no expense of additional masks...
FinFETs with the low temperature microwave annealing process have been successfully fabricated and the superiority of the microwave annealing process has been precisely studied. For the first time, it is revealed that the microwave annealed FinFET exhibits less Vth variability and lower gate leakage.
Trap rich silicon-on-insulator (TR-SOI) substrates have been widely adopted for high performance RFICs in cellular front-ends over the past few years. With the more stringent loss and harmonic requirements for 4G and even 5G networks, TR-SOI substrate's quality has been improved continuously since its introduction. Two representative types of commercially available TR-SOI substrates are investigated...
High-speed Group IV optoelectronics are nowadays a key technology platform for over 100Gbps data communication potentially applied in data centers, high-performance cluster computing, and cloud computing servers. However, unlike III-V compound semiconductors, all these Group-V devices are difficult to be monolithically integrated on the same substrate because of a large lattice mismatch between the...
This paper describes the performance analysis of SRAM cell capability beyond 10-nm FinFET technology. Through the circuit simulation with a pseudo memory macro, optimized SRAM cell can demonstrate almost the same performance of traditional metal architecture though the read-out delay analysis. Comparing between HD (High-Density) and HC (High-Current) cell, HD cell shows better performance in the large...
To meet the large demand of huge communication capacity, high-speed, energy-efficient light source provided by 850 nm vertical-cavity surface-emitting laser (VCSEL) are promising candidate, which shows superior ability in short reach optical links and interconnects. However, for the next generation communication systems like 5G mobile communication and 400 G Ethernet, current 850 nm VCSELs need significant...
FinFET is regarded as one of the most promising device structure for future scaling-down demands. However, heat dispassion is a severe problem for the device performance and reliability in nano-scale FinFETs. Germanium (Ge) is a novel channel material with its high carrier mobility, especially for PMOSFET. However, the bulk thermal conductivity of Ge (52.98Wm−1K−1) is almost 3 times smaller than that...
In this paper, multi-phonon transition model of RTN in FinFETs with statistical distribution is integrated into industry-standard BSIM-CMG, and read stability of SRAM is thoroughly examined. Different tendencies of SRAM failure probability plateau caused by RTN are found, which reflect real circuit operation situations. The impacts of RTN amplitude, bitline capacity, operation frequency on Vmin are...
Record high current density of 300 μA/μm with low contact resistance of 200 Ω μm and a channel length of 0.8 μm at a drain-source bias of 1.6 V has been achieved for the first time in MoS2 field-effect transistors (FETs) grown by chemical vapor transport. The low contact resistance is achieved using a polyethylene-oxide cesium-perchlorate solid polymer ion conductor formed by drop casting. The charged...
We report nanoscale oxide based analog synpase device and Insulator-Metal-Transition (IMT) oscillator neuron device for neuromorphic system [1,2]. By controlling the redox reaction at Metal/Pr0.7Ca0.3MnO3 (PCMO) interface, we can control synapse characteristics such as switching uniformity, disturbance, retention and multi-level data storage under identical pulse condition. Among various metal electrodes,...
We demonstrated a strain boost technique tailored for 3-Dimensional (3-D) structure on pFinFETs so the longitudinal stress can be locally maximized in the fin. The resulting effective mobility (μeff) improvement by this technique was effectively transferred to the enhancement of the injection velocity (Uinj). The saturation drain current (Idsat) and the ring oscillator speed under the same electrostatics...
We demonstrate a new contact technology for realizing a near band edge contact Schottky barrier height (ΦB) in black phosphorus (BP) p-channel transistors. This is achieved via the use of high work function nickel (Ni) and thermal anneal to produce a novel nickel-phosphide (Ni2P) alloy which enables a record low hole ΦB of ∼12 meV. The formation of reactive Ni2P/BP contact was found to further improve...
This paper proposes an extensive analysis of the impact of both structural effect and charge parameters on silicon nanowire-based biological sensors, for single-charge detection. These parameters are calibrated on physical and electrical characterizations and are subsequently introduced in a compact model to predict the signal over noise ratio (SNR). We finally propose rules for the design of nanowires...
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