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In order to get higher efficiencies in multijunction solar cells, a 1eV material lattice matched to germanium has been searched tenaciously for years. In this context, a hybrid III–V/IV multijunction and single junction solar cells incorporating 1eV SiGeSn alloy are presented. A basic characterization of these solar cells, which has been grown by CVD and subsequent MOCVD, has been carried out.
In this work we show a baseline fabrication process of interdigitated back contacted IBC c-Si(p) solar cells, which combines conventional diffusion oven stages to define base p+ and emitter n+/n++ regions at the back side, with outstanding front surface passivation using atomic layer deposited Al2O3 films over random pyramids surfaces. Cells include a selective phosphorous n++ emitter in order to...
In this work, TiN/Ti/HfO2/W devices have been fabricated and their resistive switching (RS) characteristics have been assessed. The analysis of the obtained results indicates an asymmetric bipolar RS behavior with two very well defined resistance states and good reliability in large sequences of DC voltage sweep and pulse-train cycles.
This work describes an innovative application of structures of photonic crystal slabs for gas sensors. Structures consisting in double ring have been studied by simulation. Their working mechanism is based in the effect of a given target gas in the pores of the slab. The effect pursued is to translate the variation of refraction index of the gas inside the pores into a shift in the position of peaks...
This contribution studies the improvements, in terms of performance and variability tolerance, of implementing an hybrid CMOS-SET device when different Field Effect Transistors are regarded, e.g. Nanowire, UTBB FDSOI and FinFET. The Nanowire-based SET-FET presents the highest integration level and a significant increase of drive current and variability mitigation. Moreover, the SET-FET implementation...
The present work aims to verify the use of ZnO and ZnO/SnO2 composite nanofibers (NFs) as resistive NO2 gas sensors. Nanofibers with diameters of a few hundred nanometers were obtained by electrospinning of polyvinyl alcohol (PVA) and metallic salt solutions and deposited onto micromachined silicon substrates. The ZnO electrospun nanofibers exhibit good sensing properties to NO2 in the temperature...
In this work we present the first steps towards achieving Photonic Crystals (PCs) operating in the Near-Infrared (NIR) wavelength range using Macroporous Silicon (MPS). The MPS structures herein shown are fabricated using Electrochemical Etching (EE) of silicon. Pores are arranged in a square lattice of 500 nm periodicity and pore size is around 200 nm to 350 nm. Preliminary results show straight...
The electrical properties of Al2O3-based metal-insulator-semiconductor capacitors have been investigated. Three different metal gate electrodes were used: two mid-gap metals (TiN and tungsten) and aluminum, a metal with a work function close to the silicon electron affinity. Aluminum oxide films were grown on p-type silicon substrates by atomic layer deposition using trymethylaluminum and water as...
In this work, the complete technological process for the fabrication of Ti/graphene oxide (GO)/Ti structures is discussed. A microelectronics-compatible deposition technique for GO films is developed, which enables fully covered samples. Control over GO thickness is obtained by a multiple-step spin coating process. GO films have been interfaced for preliminary electrical testing. First insights into...
A novel Love-wave sensor based on multi-guiding layers, SiO2 layer and indium tin oxide (ITO) nanoparticle layer, was developed. The ITO nanoparticles worked as guiding and sensitive layers at the same time. The interaction between ITO nanoparticles and toluene molecules produced changes in elastic properties of nanoparticles and consequently the sensor suffered a proportional frequency shift for...
A model for filamentary conduction in RRAMs based on Metal-Insulator-Metal (MIM) structures has been developed. The model describes RRAM resistive switching processes by calculating the formation and rupture of conductive filaments (CFs) in the dielectric. The resistance of the electrodes, of the CF and the hopping current in the gap between the CF tip and the electrode, are taken into consideration...
Nanostructured ZnO layers have been deposited onto SiO2/Si substrates by spray pyrolysis, with previously patterned interdigitated gold electrodes. We have then measured the capacitive and resistive response against ambient parameters such as relative humidity and illumination.
DC characteristics of AlGaN/GaN on Si MOS-HEMTs are measured and numerically simulated, with substrate temperature up to 140°C, varying the gate width and gate length. Different gate recess depths are simulated in ATLAS in order to further investigate and optimize the device performance. Thermal boundary conditions and device thermal resistance are included in the structure for accurate simulation...
ZnO rods were grown via aerosol-assisted chemical vapor deposition on Si-based micromachined platforms. The photo- and thermo-activated sensor characteristics were evaluated towards carbon monoxide, ethanol and toluene. Results proved photo-activated response at room temperature with improved response and selectivity compared to the thermo-activated response at 250 °C. This property becomes significantly...
In this paper we study the transmittance and the emission response of two different macroporous silicon structures with cavities. The aim is to evaluate the viability of these structures to be employed in a future gas sensor device.
In this paper we analyze the effects of the hot phonon and self-heating on the static electronic transport characteristics of monolayer graphene. For this purpose, the Ensemble Monte Carlo method self-consistently coupled to a thermal resistive model for the heat dissipation is employed. This way, the most relevant mechanisms that limit the drift velocity are considered in a microscopic framework...
Energy autonomy keeps being one of the most desired enabling functionalities in the context of off-grid applications, such as continuous monitoring scenarios and distributed intelligence paradigms (Internet of Things, Trillion Sensors). SiNERGY, a European project (GA n° 604169) coordinated by IMB-CNM (CSIC) has focused on silicon and silicon friendly materials and technologies to explore energy harvesting...
Planar nano-diodes fabricated on an AlGaN/GaN heterolayer have been measured, showing capability to detect microwave signals up to 43.5 GHz at room temperature. A single nano-diode with length L=1000 nm and width W=74 nm provides a response of approximately 55 mV DC output for a 0 dBm nominal input power at 1 GHz, with a very small fraction of the RF power reaching effectively the device due to a...
In this work, we report on the development of silicon nitride (SiNx) layers to be applied to crystalline silicon high-efficiency solar cells. In particular, our research group has developed the concept of Doped by Laser (DopLa) solar cells where the highly doped regions are based on laser processed dielectric films. This concept has been recently applied to Interdigitated Back-Contacted (IBC) solar...
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