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The paper presents an original concept for interfacing of tensoresistive and capacitive force sensors with applications in modern microelectronics systems. In the first part, the authors show the results and conclusions of a PSPICE simulation for an original patented circuit. The used simulations models were introduced in some circuit components corresponding to the realistic behavior implementation...
The Rabi Hamiltonian is characterized by: Ω — the frequency of the transition between the atomic levels, ω — the oscillator frequency, and λ — the coupling between these two subsystems. Even though the Rabi Hamiltonian is quite simple its complete solution is rather complicated and simpler Hamiltonian forms are needed for various regimes of parameters. In the ultra-strong coupling regime of the Rabi...
In this paper a measurement setup is presented that enables automatic characterization of silicon piezoresistive MEMS pressure sensors. It is used for determination of the pressure and temperature dependences of sensor electrical parameters. Some of the equipment in the setup, and the software application that controls the process, are developed at the Center of Microelectronic Technologies (CMT)...
This paper presents the design, simulation, fabrication, characterization and displacement measurements of a micro-tweezer manufactured using the biocompatible polymer, SU-8. The micro-tweezer is electro-thermally actuated and the design is based on V-shaped configurations. The measurements show a maximum in-plane opening of the micro-tweezer tips of 70.5 ßm for 0.74 V applied while the out-of-plane...
In this paper we report about the reproducibility of CMOS plasmonic mid-IR thermal emitters. The electro-thermal transduction efficiency of the devices is shown not to depend on the plasmonic structure geometry and to be extremely reproducible from device to device, wafer to wafer and lot to lot. The small variation in terms of optical performance is investigated through numerical simulation and attributed...
NiO/mesoporous SnO2 was deposited by incipient wetness impregnation of the SnO2 powder prepared by hydrothermal synthesis route templated by Brij® 35. The sensing properties were acquired and the dependence on the operating temperature of the sensitive material was pointed out. Sensitive selectivity towards H2S detection was highlighted at 350 °C.
This work presents fabrication and characterization of thermal infrared sources based on chromium meander resistors obtained by microfabrication techniques. The infrared source fabrication is based on a simple technological approach which employs standard photolithography and wet etching processes. The electrical and optical characterization of the sources offered good results for 1 square mm area...
The influence of light illumination on the programming of a capacitor floating gate memory based on Ge nanocrystals in HfO2 was studied. The capacitor was fabricated on a c-Si substrate by magnetron sputtering deposition of a layer sequence of HfO2/Ge-HfO2/HfO2 and post-growth rapid thermal annealing for nanocrystals formation at 600 oC. The illumination of the structure was performed through a semi-transparent...
Organic light emitting diodes (OLEDs) are fabricated using two novel polymers, isotactic and syndiotactic poly(N-pentenyl-carbazole) (i-PPK and s-PPK), as emitting layers. The electroluminescence spectra of the devices are analyzed in comparison with the photoluminescence spectra of polymer films and are related to their microstructure properties. Blue light emitting diodes are obtained, except for...
This paper presents a potentially cheap oxygen sensor based on photo acoustic (PA) principle. Commercially available low cost devices are used for this implementation. The presentation is focused on aspects related to PA signal analysis, PA chamber influence on sensor response and environmental humidity impact on sensor sensitivity.
ReRAM devices show potential for in memory computing systems due to their capability to both store and process data via implication logic. This type of logic, which is typically implemented using the set transition, could offer reliability and performance advantage if implemented with reset switching of the device. However, the gradual transition of the reset makes it impractical. This paper presents...
Numerical simulation (le. based on the Finite Element Method — FEM) is an important design method and tool that allows prediction of failure position of the Double Diffused Metal-Oxide Semiconductor (DMOS) devices and a comparative analysis of the robustness of different metallization topologies with regard to Thermal Induced Plastic Metal Deformation (TPDM). As the dimension of analyzed components...
The composite and nanocomposite are often used in several fields for different applications: aerospace, automotive, biomedical electronics. In particular, in these last years in aerospace sciences, the amount of used composites loaded with nanostructures is increased. One relevant application is the use of nanocarbon based composite as a coating to protect electrical circuits from possible electromagnetic...
Gallium Nitride (GaN) based power devices have been demonstrated to deliver higher energy efficiency than their Silicon (Si) counterparts for 200–1.2kV rated applications. The benefits of GaN technologies and their market potential will be highlighted in this paper together with the main challenges that GaN-based power systems need to overcome to reach their full potential and finally enter the market...
In this paper, the basic principles of Near-Field Microscopy will be reviewed with focus on the micro- and nano-scale resolution configurations for material science measurements. Results on doping profile, dielectric and magnetic properties will be presented, with details on the calibration protocols needed for quantitative estimation of the dielectric constant and of the permeability.
Recent advances and new trends in high voltage SiC based MOSFETs are analyzed. The main focus is done on design optimization strategies for reducing the on-state resistance. Gate oxide treatments for improving the interface quality resulting in a lower channel resistance are reviewed as well as solutions for lowering the JFET and bulk resistance components. The 3rd quadrant operation, short-circuit...
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