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Two gallium oxide (Ga2O3) MOSFETs, a non field plated (NFP) device and a field plated (FP) device, are proposed and simulated in Silvaco TCAD. The static characteristics of the devices were obtained from Silvaco TCAD and the characterization of switching performance was conducted in Silvaco mixed-mode with inductive load test circuit. To study the influence of the thickness of the field plate oxide...
In order to determine how material characteristics percolate up to system-level improvements in power dissipation for different material systems and device types, we have developed an optimization tool for power diodes. This tool minimizes power dissipation in a diode for a given system operational regime (reverse voltage, forward current density, frequency, duty cycle, and temperature) for a variety...
This work reports the reliability of Infineon's CoolGaNTM 600V Enhancement mode GaN-on-Si transistors under high temperature reverse bias operation. Using the most conservative lifetime model; the extracted lifetime at use conditions of 480V, 125°C at 0.01% failure rate is greater than 70 years. The extracted activation energy (Ea) is 0.77eV with a single failure mode, Drain to Substrate. A common...
In this paper, design considerations for transitioning from a Si-IGBT based inverter to a SiC-MOSFET based inverter are discussed. An existing Si-IGBT power structure is modified using a footprint compatible SiC-MOSFET module, with changes made to the power structure and gate drive for the high PWM switching frequency required for SiC devices. Design issues such as inductance minimization, EMC mitigation...
This paper addresses the replacement of enhancement mode Si IGBTs with depletion mode SiC vertical junction field effect transistors (VJFETs) in a commercial motor drive in current production. A Yaskawa A1000 CIMR-AU4A0088FAA motor drive was analyzed and found to have reliability and safety features that can be exploited to introduce normally on SiC transistors with no loss in safety or reliability...
In this paper, the design of a multi-layer laminated busbar for a Si and SiC hybrid switch based 100 kW three-level T-type, single-phase, power electronics building block is presented. Due to the absence of three-level T-type topology in WBG based power modules at this power level, the PEBB design along with the busbar design is novel. This busbar facilitates the interconnection between the DC-link...
In this paper, high frequency PCB parasitic analysis and control design of a GaN-FET based grid-connected solar microinverter using a differential-mode Cuk inverter (DMCI) topology are presented. The DMCI is operated using a discontinuous modulation scheme (DMS), which helps to achieve high efficiency and reduced device voltage ratings. Detailed hardware layout design for high frequency power and...
This paper presents short-circuit test results on commercial, multi-chip 1200 V SiC MOSFET half-bridge modules up to 860 V dc, suitable for three-phase 480 V grid-interfaced applications. The peak short-circuit current is measured to be over 5 kA, with around 3 μs withstand for the given voltage and commutation loop inductance. During the post-failure investigation, it is observed that only a few...
This paper presents comparison of GaN based switched-tank converter (STC) and traditional cascaded voltage divider (CVD) dc-dc converter for data center applications. The operation principle of two kinds of converters are presented. And simulations with Saber are both conducted to verify the proposed comparison, respectively. The system volume and efficiency are fully compared via GaN based device...
Electricity generation currently accounts for 40% of primary energy consumption in the U.S., and over the next 25 years is projected to increase more than 50% worldwide. Electricity continues to be the fastest growing form of end-use energy. Power electronics are responsible for controlling and converting electrical power to provide optimal conditions for transmission, distribution, and load-side...
Presents the introductory welcome message from the conference proceedings. May include the conference officers' congratulations to all involved with the conference event and publication of the proceedings record.
Silicon carbide (SiC) has long been recognized as an ideal semiconductor for power electronics because of its wide bandgap, high critical field, high-quality native oxide (SiO2), and the availability of single-crystal SiC substrates. SiC diodes entered commercial production in 2002, and have accumulated hundreds of billions of hours in the field with a failure rate 10x lower than silicon parts they...
Wide bandgap semiconductors enable high voltage (10 kV and more) switches. As a consequence, new packaging solutions are required to prepare the ground for such devices. The metallized ceramic substrate is a well-known and established technology for voltages up to 3.3kV, but it exhibits some weaknesses at higher voltages: due to its manufacturing process, the profile of the metallization is sharp...
SiC power semiconductors typically have large margins in their breakdown voltage to account for epitaxy variation. The proposed method enables the optimization of over-design in the drift region and the performance of the edge termination for high voltage 4H-SiC power devices, such as JBS diodes & MOSFETs. In this study, two designs were evaluated to validate the proposed characterization scheme:...
Wide bandgap devices are enabling high-efficiency operation for 6.78 MHz highly resonant wireless power applications based on the AirFuel standard. Wireless power systems need to move beyond charging pads and become considered power sources. To do this they need to support a larger area such as an office desk and increase their power capability. This demands fundamental changes in coil technology...
In this paper, we construct three Class-Φ2 resonant converters with GaN HEMT power devices, 1 kW output power, and switching frequencies of 10 MHz, 30 MHz, and 54.24 MHz. The GaN HEMTs in these converters exhibit losses, approximated thermally, that are significantly higher (up to an order of magnitude) than those predicted by simulation. To investigate, we use a Sawyer-Tower circuit to evaluate the...
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