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Advances in circuit techniques, aided by continued lithographic scaling, will deliver CMOS technology capable of operation in the submillimeter-wave bands. Many building blocks operating at near-THz frequencies in silicon-based technologies (SiGe and CMOS) have appeared in the recent literature. Although many significant challenges remain, these results suggest that CMOS THz ICs are an inevitability...
A novel compact microstrip Wilkinson power divider with an easy design and fabrication is proposed in this paper. Through capacitive or inductive loading of both of the quarter-wave transmission lines and the isolated resistor employed in conventional Wilkinson power dividers, reduction of the transmission line segments from λg/4 to λg/30 is obtained. Therefore, the proposed structure can distinctly...
A 18 to 24-GHz broadband power amplifier (PA) by 0.18 um CMOS technology is presented in this paper. The low loss microstrip line matching technique is used to reduce transmission losses and achieve higher gain, PAE and enough output power. An improved Gain-boosting technique is also included in the PA architecture to improve high frequency gain and gain flatness. The measurement results show that...
This paper presents a new S-parameter matrix calculation based de-embedding methodology. In this method, a noval even-odd mode measurement is proposed to correct the error in traditional through line de-embedding methodology. The influence of the asymmetric input and output stub is canceled. A comparison of the different de-embedding methods for active device (0.7 μm InP DHBT) are performed up to...
This paper presents a power efficient static frequency divider (SFD) for wideband operation. Series inductive peaking technique is utilized to construct broadband input network of the divider. The aspects of design using the technique are supported with exhaustive simulations. The prototyped divided-by-two frequency divider is implemented in 65 nm LP CMOS technology. Measurement results show that...
When transistor noise characterization becomes a difficult task at millimeter wave range, the accuracy on the resulting noise parameters is not or poorly discussed. Within this context, this paper aims to present a methodology to estimate the uncertainties related to the extraction of the four noise parameters when using in situ tuner techniques, in the 130–170 GHz frequency range. B9MW SiGe HBT from...
The millimeter-wave differential power amplifier using on-chip transformer is proposed to achieve high saturated power. To realize the high freqency operation, cross couple capatitor MOSFET is applied. The parasitic element is reduce the performance of the circuit. In this paper on-chip transformer is used as balun and impedance-matching network. The component loss is reduced by unifying the function...
In this paper, a novel miniature ultra-wideband (UWB) microstrip bandpass filter is proposed. The filter consists of a short-ended interdigital coupled-line unit fed by stepped-impedance lines. Through adjusting the stepped-impedance feed lines, an ultra wide passband with equal-ripples can be obtained. The filter also has multiple transmission zeros on both sides of the passband, exhibiting favorable...
A wide locking range hybrid automatic gain control (AGC) loop for an ISM-band receiver is presented. It is composed of a three-stage Programmable Gain Amplifier (PGA), a differential-output Received Signal Strength Indicator (RSSI), a SAR ADC and control algorithm logic. The indicator's transfer function is realized in three segments, each of them covering 20dBm input range, in order to achieve higher...
A high-performance bootstrap switch for low-voltage switched-capacitor (SC) circuits is presented. The switch enables the precise sampling of input signals on a low voltage supply with high speed, low nonlinear distortion. Experimental results in TSMC 130nm CMOS process show that a peak signal-to-noise-and-distortion ratio (SNDR) of 102.8 dB, spurious-free dynamic range (SFDR) of 104.6 dB and total...
A novel lowpass filter(LPF) with compact size, which contains a pair of symmetrical dumbbell ring shaped defected ground structure (PSD-DGS) and compensated microstrip line with open shunt stubs, is presented in this paper. Sharp cut-off characteristics is obtained by the PSD-DGS, while the compensated microstrip line is used to reduce the loss of passband. Moreover, open shunt stubs is implemented...
This paper presents a new RF-DC rectifier with high power conversion efficiency (PCE) at 13.56MHz, utilizing a novel controlled Vth compensation technique. Simulation results show the maximum PCE of the single-stage, 3-stage, and 5-stage rectifiers are 65.7%, 56.2%, and 50.5% with low input power of −17.64dBm, −8.86dBm, and −5.3dBm, respectively.
Clock Data Recovery (CDR) circuits based on binary phase detector gained popularity in the last decade. In this paper, nonlinear control theory, specifically describing function, is employed to analyze the stability of PLL circuits for both ideal binary phase detector (BPD) and BPD with consideration of metastability. The significance of loop delay and metastability are discussed. The derived results...
A chirp-UWB transceiver which transmits a 1.3 bit information in a single pulse clock period by embedding pulse position information in the chirp FSK modulation is implemented in 0.18μm CMOS. A digital-intensive chirp-UWB transmitter by employing digital ramp generator and a digitally-controlled oscillator (DCO) is designed. In the receiver, a dual-BPF based regenerative architecture is employed to...
A fully integrated class-E power amplifier IC in 180-nm CMOS is presented for 2.5-GHz band short range wireless communication systems. To realize high efficiency with low operation voltage, a class-E amplifier with back gate effect has been designed, fabricated and fully evaluated. The proposed amplifier IC can operate at a supply voltage from 0.5 V to 1.5 V. The amplifier IC exhibits a P1dB of 6...
A 2.5-GHz low power high gain and high linearity CMOS low noise amplifier (LNA) is presented. The modified derivative superposition (MDS) technique is employed to improve the linearity performance. The bulk-bias control of auxiliary transistor (AT) in MDS technique is used to extend the AT's bias control range. The current-reused topology is utilized to full-fill the low power consumption and high...
In this paper, the latest research results for design and characterization of an 85 GHz fully monolithic integrated schottky rectenna (rectifying antenna) using SiMMWIC (Silicon Monolithic Mm-Wave Integrated Circuits) technology are presented. Under RF excitation in frequency range of 75 ~ 90 GHz a sharp receiving profile at 85 GHz of the designed rectenna is clearly characterized. With different...
A 3-D ring oscillator integrated with through silicon vias (TSVs) is designed and fabricated for testing multilayer stacked integrated circuits with TSV. The proposed 3-D ring oscillator consists of 13 stages. 65-nm CMOS dies with two current-starved inverter and via-last TSVs are designed for the five middle layers of 3-D ring oscillator. The two cascaded inverters are connected to the up-side layer...
Conventionally circuit performance variability is analyzed with Monte-Carlo simulation and design corner analysis. On the other hand, statistical methods such as design of experiments (DoEs), response surface modeling (RSM) and compact modeling (CM) can achieve a better trade-off between simulation efficiency and accuracy. This paper investigates these variability-aware analysis methodologies. Based...
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