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Simulation of GaAs nanorings formation by droplet epitaxy was carried out using a kinetic lattice Monte Carlo model. Dependence of nanoring morphology on growth temperature, arsenic flux intensity and gallium drop surface density was demonstrated. The formation conditions for single, double and triple concentric rings were analyzed.
Optical filter based on multilayer structure was designed and fabricated by means of nanoimprint lithography. Spectral properties were simulated numerically. Working principle was shown to found on combination of Fabry-Perot and plasmon resonances.
In this work the features of current transport through a barrier in Au/native fluoride/HgCdTe Schottky diode are under studying. Using I-V dependences at different (from 90 to 290 K) temperatures, it has been observed that an ideality factor decreases and a barrier height increases with a temperature increase what is in disagreement with the ideal thermionic emission theory of a Schottky barrier....
The article presents a method of producing on the surface of the ceramic substrate on the basis of α-Al2O3 quasi-periodicals and nanostructure. It is shown that a laser beam on the surface of the ceramic substrate based on α-Al2O3 convectional moving as the Rayleigh-Benara can be excited. One of the areas of industrial application in which nanostructures can be used is semiconductor optoelectronics...
Measurements results of spectra of permittivity, permeability, reflection, transmission and absorption coefficients of polymer composite with nanosized filler are presented. Material absorbs electromagnetic waves intensively at superhigh and extremely high frequencies.
Formula for calculation of holes transfer frequency in a semiconductor thin film with cubic structure under a strong uniform magnetic field is derived using perturbation theory approach. The transfer takes place between the Landau levels with numbers n = 0 and n = 1.
The electrical properties of polysilicon on insulator thin films (with a thickness 30–100 nm), which define a wide range of applications in electronic devices, were studied. Polysilicon thin film transistors are manufactured by a standard cheap technology that makes possible a mass production of semiconductor devices. The effective carrier mobility and state density in polysilicon thin film grown...
Active thermostats' development process to obtain the high precise Zener diode implemented by CMOS technology is presented in the paper. The process flow selection procedure and changes in accordance with the technology of the different schematics are described. Measurement results of the obtained devices are provided.
It was reported earlier that the polarization of microwaves substantially influence on amplitude of microwave induced resistance oscillations (MIRO) that was investigated in detail in number of works in terms of different approaches to explain the MIRO arising. In our work rotation of the angle between microwave electric field and current direction in Hall bar was demonstrated experimentally to influence...
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