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The transition effect ring oscillator (TERO) based true random number generator (TRNG) was proposed by Varchola and Drutarovsky in 2010. There were several stochastic models for this advanced TRNG based on ring oscillator. This paper proposed an improved TERO based TRNG and implements both on Altera Cyclone series FPGA platform and on a 0.13um CMOS ASIC process. FPGA experimental results show that...
This paper presents an optimized doping strategy for vertical-channel three-dimensional (3D) NAND flash. This NAND flash is junction-free without dopant inside the string. Source side near SSL and drain side near GSL are both n-doped junction, providing electron in +FN programming. P-doped substrate provides hole in −FN erasing [1]. Carrier source in both program and erase does not depend on GIDL...
Here, an approach for synthesizing large-area and high-quality MoS2 flakes was developed. In addition, we made up the MoS2 photoelectric detector and studied the photocurrent response of the detector. We firstly used the ceramic pieces to control MoO3 evaporation for obtaining large-area MoS2. Our CVD reaction is hydrogen free, very simple operation, high repetition rate and cost saving. The obtained...
In DRAM refresh, due to a few cells that have lower retention time, it makes DRAM controller to raise refresh frequency to keep the data integrity, and produces unnecessary refresh for the other normal cells which resulting in large DRAM refresh overhead. To resolve this problem, we propose an integration scheme for DRAM refresh based on the retention-aware auto refresh (RAAR) method. With given distribution...
Development of semiconductor process makes devices have smaller area, lower power, and reduced wire connections. To achieve this purpose, macro placement plays an important role in the design flow. In this paper, we present a routability-driven macro placement algorithm considering pins location to optimized scaled routing congestion and macro placement area. By considering pins location, reclassify...
A metallic-target reactive co-sputtering technology is used to fabricate zinc tin oxide (ZTO) thin-film transistors (TFTs). The effect of the O2/(Ar+O2) flow rate ratio on the performance of the resulting TFTs is investigated in detail. It is found that an O2/(Ar+O2) ratio of 11%–12% produces devices with the best performance, including a linear mobility of 8.6 cm2/Vs, subthreshold swing of 0.36 V/decade,...
We investigated the impact of sputtering power of source/drain metal on the characteristics of a-IGZO TFTs fabricated using back-channel-etch (BCE) process. With the increase of sputtering power, the subthreshold swing of TFTs tends to deteriorate. From the analysis of atomic force microscope (AFM), it is shown that the surface roughness of the back-channel interface increases with the sputtering...
Carry look-ahead adder (CLA) is a fast adder. This paper is delicated to accelerate the 4-bit CLA circuit. In proposed circuit structure, XOR gate is replaced by NOR gate. Moreover, logic gates have less fan-in and fan-out and signal throughs one less MOS transistor in critical path. All designs are built in dynamic CMOS logic gates. Simulation results show that the proposed architecture has advantages...
The dark current in a photodiode limits the use of CMOS image sensor in low noise applications. The dark current is due to the generation-recombination centers present on the surface, space charge region and the bulk. The generation-recombination current depends on the number of active traps present, capture cross-section area of the traps and the operating temperature. In this work we show that the...
We present a click-element-based asynchronous loop structure for control path of asynchronous micro-control unit (MCU). The loop, which has one-stage control circuit instead of cascade circuits, can be triggered by only one trigger signal and stopped by a preset number. To verify the loop structure, we design an asynchronous MCU simulated in FPGA. The experimental results show that the MCU can be...
A comparative study of modified models for calculating the switch capacitance of electrostatically actuated fixed-fixed beam MEMS shunt switch has been presented considering the effect of beam perforation and dielectric layer simultaneously. Two different capacitance calculation methods using Yang model and Mejis model have been considered in the analysis incorporating fringing field effect due to...
This paper presents an analysis for the electromagnetic interference (EMI) related common-mode (CM) noise in differential high-speed data links with different signal modulation schemes, e.g. non-return-to-zero (NRZ) and 4-level pulse amplitude modulation (PAM-4). The CM noises, introduced by the mismatch of data rising and falling edges in both cases, exhibit the similar positive correlation with...
Upset hardened dual-interlocked cell (DICE) [1] has found an important place in circuits for space applications due to its ability to mitigate single event upsets (SEUs). In this paper, we show that DICE latch/flip-flop exhibits better immunity to metastability compared to D flip-flop, and can be used as data synchronizer. Metastablity constant (τ), whose inverse captures the ability of the latch...
This paper presents a Cylindrical GAA TFET based on germanium source for low power applications. The proposed device used the merits of low band gap material such as germanium, which is used as a material in the source region. Device investigations have been made in terms of DC characteristics like ION, IOFF, SS, ION/IOFF. The proposed device increases ON-current as high as 1.9 × 10−5 A/μm, which...
A new on-chip transient detection circuit for system-level electrostatic discharge (ESD) protection is presented in this work. The circuit simulation and experimental results with silicon testchip in a 0.18-μm CMOS process have confirmed that the new proposed circuit can successfully detect the occurrence of system-level ESD-induced electrical transient disturbance. The detection output can be used...
MONOS-Type nonvolatile memory devices with quantum dots (QDs) as charge-storage layer (CSL) have been investigated for a long time to replace conventional polycrystalline silicon floating gate memory due to the advantages of smaller operating voltage, faster programming/erasing speed, smaller size, better endurance, and increased bit storage density. As the key part, different types of semiconductor...
This paper presents a fast-response full-wave inductor current sensor for a DC-DC converter operating in 10 MHz switching frequency. It can achieve high sensing accuracy better than 93% with inductor current varying from 100mA to 2.1 A. Also, the time response of proposed current sensor has been greatly improved and achieved < 8 ns for sensing full wave inductor current with a low transition spiking.
As the progress of the process technology, the clock mesh design has been widely used in high-performance circuit to reduce the clock skew. Since the uniform mesh design cannot avoid hot spots, the non-uniform mesh design is more useful for avoiding the timing variation caused by high temperatures. In this paper, we propose an integer linear programming (ILP) approach to reduce the wire length of...
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