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To enable beamsteering capabilities for millimeter-wave radar and communication systems, phase shifters are key components. In this paper a WR3-band (220–325 GHz) phase shifter MMIC is presented, which is based on reflective-type phase shifters and enhanced with an integrated variable gain amplifier for loss-compensation, RMS error optimization and antenna tapering. The circuit has an average loss...
This work presents a low noise amplifier with variable gain, large bandwidth and a tunable output matching network fabricated in a 130 nm SiGe BiCMOS technology. The circuit is designed as an input stage for mm-wave wireless applications, where gain control improves the linearity of the full system and extends its input-power range. The noise performance is optimized with an inductive interstage matching...
We present a fully programmable frequency divider in two different versions operating at input frequencies from DC to 94 GHz and 92 GHz, respectively, for the use in wideband and highly stable millimeter-wave frequency synthesizers. Using a parallel interface the division factors can be programmed to all integer values between 12 and 259. The high input speed in conjunction with programmability is...
This paper presents the design and implementation of a low power, wideband and high sensitivity CMOS power detector in 130 nm standard CMOS technology. It utilises a travelling-wave structure to achieve wideband input matching bandwidth from 7 GHz to more than 70 GHz. By biasing the power detectors in subthreshold regime, it achieves a measured peak voltage sensitivity of 75 dB at 7 GHz while maintaining...
This paper demonstrates a wideband, subharmonic down converting mixer using a commercial 130-nm SiGe-BiCMOS technology. The mixer adopts a frequency doubling LO-stage, a differential switched-transconductance RF-stage, on-chip LO and RF baluns, and two emitter-follower buffer-stages. The measured results exhibit a maximum conversion gain up to 2.6 dB over the frequency range of 100 to 140 GHz with...
Gallium Nitride, in the form of epitaxial HEMT transistors on silicon carbide substrates is now almost universally acknowledged as the replacement for silicon bipolar, power MOSFET, high power devices in the RF, microwave, and mmW arenas. This is particularly true for GaN-on-SiC based MMIC's which enable state-of-the-art high frequency performance and bandwidth to be extended into Ku-Band and Ka-Band...
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