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Cover image provided by courtesy of Maurício F. C. Martins Quintela, Nuno M. R. Peres, and co‐workers from University of Minho, Campus of Gualtar, Portugal.
4H‐SiC based devices have garnered significant interest within the realm of high‐voltage and high‐frequency electronic equipment. Schottky barrier heights (SBHs) play a pivotal role in determining the properties of metal/4H‐SiC contacts and holding significance for electrical performance of 4H‐SiC devices. Herein, the first‐principles method is utilized to investigate the interface properties between...
Herein, the effect of addition of Cu, Fe, and CuFe on microstructure and magnetic properties of equiatomic ternary AlNiCo alloy is reported. This addition of Cu, Fe, and CuFe to AlNiCo results in L12, B2, and mixed α + B2 phases, respectively, during the mechanical alloying (MA) and subsequent annealing process. The low‐temperature magnetic properties show that the addition of nonmagnetic Cu to AlNiCo...