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A novel and simple structure for improving CMRR is introduced. This structure can be added to the circuits like folded cascode amplifier, telescopic amplifier, current buffers, .etc to improve the CMRR of these circuits. This simple and effective circuit uses common mode deviating technique to improve CMRR at least 12dB while preserves CMRR bandwidth which is a novel technique in order to improve...
The wireless technology evolution has consistently focused on increasing data rate and user mobility while keeping overall cost at bay. The quest for higher data rates has led to increased spectral utilization in new standards with unfortunate tradeoffs such as rapidly varying signals and high peak-to-average power ratio. To preserve linearity, existing RF PAs are operated with reduced input drive,...
This paper presents the new design of a CMOS current comparator for high speed and minimum size. This enables a very low response time to achieve high speed and less circuit complexity. In addition we have got less power consumption. A new current comparator exhibits high speed whilst maintaining low power consumption. Simulation results allow the design approach to be validated with performance comparison...
An RMS detector using CMOS Quad for the on-chip RF testing is introduced. When a differential voltage is applied across a CMOS quad, it generates both even and odd output currents. Even component of the generated current is isolated and converted back to voltage using inverse function. Higher frequency components of the output voltage is filtered out. The DC or low frequency output of the detector...
This paper expounds on power efficiency enhancement techniques that are sought for the reduction of power consumption of wireless radio frequency power amplifiers (RFPA) and transmitters. The paper will focus on advanced power amplification architectures such as doherty power amplifiers (DPA), linear amplification using nonlinear components (LINC), envelop elimination and restoration (EER) and envelope...
The silicon vertical MOSFET RF power amplifier described in this paper is the industry's first to utilize high voltage vertical technology. Operating under pulse conditions of 200 musec pulse width and 10% duty cycle it delivers more than 100 W of peak power. Operating in Class AB with only 50 mA of bias current the device achieves more than 20 dB of gain and 47% power added efficiency at P 1 dB compression...
This paper describes a methodology to measure the low-frequency noise of InP-based transistors. These transistors have demonstrated transition frequencies (ft) greater than 200 GHz, generally achieved at current densities in excess of 200 kA/cm2. Depending on the DC current gain, this may represent base currents of some mA. For the first time, curves of Sib, Sic and Sibic for base currents of up to...
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