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New methods were studied to reduce response time and threshold voltage drift of the FET-type hydrogen sensor. The advantages of the Pt-Ti-O gate over other sensor gate materials were demonstrated. Extending Langmuir's dissociative adsorption theory to non-equilibrium states enabled us to reduce the response time, and the negative gate bias operation with P-FET-type sensor reduced the drift. Thus,...
This paper presents a model of the electrical transport in MIS structure of metal — thin nanoporous silicon-p-Si. The obtained analytical expressions allow analyzing the contribution of the porous silicon and surface electronic states to the electrical behavior of the structure at gas adsorption. The parameters of surface electronic states for different porous silicon thickness are obtained from analysis...
Capacitive humidity sensors were fabricated using countersunk interdigitated electrodes coated with amorphous nanostructured TiO2, SiO2, and Al2O3 thin films grown by glancing angle deposition. The capacitive response and response times for each sensor were measured. The sensor utilizing TiO2 exhibited the largest change in capacitance, increasing exponentially from ~ 1 nF to ~ 1muF for an increase...
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