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It can be difficult to compare the merits of cameras using different sensor technologies using only the specifications typically provided by the manufacturers. The Noise Equivalent Irradiance (NEI) provides a normalized and unique parameter allowing a direct comparison. It is also fairly simple to calculate from the commercial specifications for a given wavelength and exposure time of interest. We...
We propose and analyze a novel highly sensitive optical magnetometer, using low-loss silicon nitride waveguides. With the recent advances in Ce:YIG pulsed laser deposition on silicon nitride, we show the possibility of reaching sensitivities on the order of 20 fT/\(\surd \) Hz at room temperature in an area <1 cm\(^{2}\) . This letter examines a number of parameters, including the dependence...
This paper reports on the state of the art silicon micromachined microphone utilizing a dual poly silicon membrane system. MEMS chips from 1.4mm down to 1.0mm side length are applied for mobile communication. Design aspects related with key performance parameters such as sensitivity, signal to noise ration and distortion are discussed. Sensitivity of − 38BV/Pa is achieved for different microphone...
We have developed self-sensing piezoresistive microcantilevers optimized for the measurement of (biomolecular) forces. Typical dimensions are 250 µm in length, 8–20 µm in width and 450 nm in thickness, with spring constants of about 1 mN/m. The devices have been electromechanically tested on wafer and show good force resolutions in air between 35 and 130 pN depending on the cantilever dimensions....
In this paper, silicon Hall sensors with different sizes and doping levels are fabricated. Based on Hall cross prototypes, dependencies of device sensitivity, 1/f noise on doping are investigated. It is found that sensitivity is inversely proportional to areal concentration (n), and 1/f noise is proportional to n−3/2. By trading off the performances, a reasonable higher doping is proved to be preferred...
Backside preparation techniques have advanced to provide reliable IC performance for bulk silicon as thin as 10µm and less (here called moderately thin=MTSi). This opens many doors for optical localization techniques as photons > 1.1 eV can be detected through backside. Now, Si and InGaAs detectors can be compared directly for photon emission (PE) and this paper investigates in depth what is important...
We summarize several lines of investigation of foundry-processed patch-antenna-coupled Si MOSFETs as plasmonic detectors of THz radiation. First, we explore detection at frequencies as high as 4.3 THz, about one hundred times higher than the transit-time-limited cut-off frequency of the devices, searching for the fundamental limits of the detection principle. Then, we address the much-debated issue...
There have been limited studies addressing how the fundamental factors affect the piezoresistive sensitivity of transistors. In this work, we demonstrate pressure sensor based on gate-all-around (GAA) nanowire field-effect transistor (NWFET) sensing element. We show eight times sensitivity enhancement of NWFET within a low gate bias (0.4V). The pressure sensitivity ((ΔIDS/IDS)/ΔP) of 0.0045 (psi)−1...
A substrate network tailored for a variety of transistor geometry including channel sizes, fingering and folding, and shapes and placements of guard bands, extends the capability and accuracy of full-chip noise coupling analysis of mixed technology VLSI integration. Analysis of substrate sensitivity of differential amplifiers in a 90 nm CMOS technology with more than 64 different geometry and operating...
In this paper the design, analysis and testing of a cantilever based piezoresistive arsenic sensor has been described. The fabrication on a single crystal silicon substrate utilizes the technologies of anisotropic chemical etching. The arsenic sensor, which is of resistive type, changes its resistance when the sensing cantilever adsorbs arsenic on its surface coated with arsenic adsorbent. Using the...
A clock generation technique for reducing the clock-jitter sensitivity of Switched current (SI) Return-to-Zero (RZ) DAC in CT ΣΔ modulators is presented in this paper. While realizing the clock-jitter insensitivity, this technique ensures that the feedback period can be utilized more efficiently so that the amplitude of feedback current can be reduced. The proposed technique employs simple digital...
We present the design and fabrication of an improved probe for scanning gate microscopy (SGM). Like our previously reported design, the new probe integrates a coaxial tip to produce highly localized electric fields and a piezoresistor to self-sense tip deflection. However, the new design achieves a vertical displacement resolution of 3.7 Å in a 10 kHz bandwidth, enabling the study of both...
A design and simulation of z-axis dual-mass CMOS-MEMS gyroscope with a low-noise capacitance sensing circuit has been presented in this paper. A gyroscope chip which implemented by the TSMC 2P4M 0.35 μm CMOS-MEMS process was proposed in this design. The associated post process was designed. For the z-axis dual-mass CMOS-MEMS gyroscope, the fully differential low-noise capacitive sensing circuit has...
We have designed and batch fabricated silicon cantilever scanning probes integrating, for the first time, a coaxial tip to produce highly localized electric fields and a piezoresistor to measure cantilever deflection. These probes will improve the lateral resolution of scanning gate microscopy enabling the study of electron organization in semiconductor nanostructures. The full-width at half-maximum...
The capacitive silicon micro-accelerometer as an important inertia device, applied in the autocar, consumer electronics, inertial guidance and so on, which has a wide application prospect. Improving the detection accuracy of capacitive accelerometer has been an important research direction, which is the key to reduce the noise, the noise mainly include the mechanical thermal noise and noise of electric...
In recent year, capacitive silicon micro-accelerometer still is the research hotspot. How to enhance the detection accuracy and further expand its application fields is the emphases and difficulty, which's key point is to reduce noise. The noise mainly includes mechanical thermal noise and detection circuit noise. The weak signal detection ways are adopted to reduce the noise, to guide the design...
Thermo-electric sensors in micro-fabricated silicon cantilevers are used in a variety of applications that exploit their temperature-dependent conductivity. While the ease and low cost of integration makes their application attractive, their low sensing bandwidth presents a significant disadvantage. In this article we present a novel scheme for enhancing the sensitivity and bandwidth of these sensors...
Parylene nanomechanical cantilevers with integrated piezoresistors were proposed for biochemical sensing based on surface-stress measurement. By using polymer as the cantilever material, the sensitivity is significantly increased. Simultaneously, parylene piezoresistive cantilevers exhibit different behaviors compared with their more rigid counterparts. Therefore new design guidelines need to be developed...
This paper describes several methodologies based on a pulsed laser beam to reveal the architecture of a high integrated SDRAM, and the different classes of Single Event Effects that can occur due to cosmic radiations. At cell level, laser is used to reveal an important technological parameter: the lithography process. At memory array level, laser is a powerful tool to retrieve cell physical arrangements,...
While the potential of FinFETs for large-scale integration (LSI) was demonstrated before on relaxed device dimensions, in this paper we present performance data of aggressively scaled transistors, ring oscillators and SRAM cells. FinFET SRAMs are shown to have excellent VDD scalability (SNM=185 mV at 0.6 V), enabling sub-32 nm low-voltage design.
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