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A novel and simple structure for improving CMRR is introduced. This structure can be added to the circuits like folded cascode amplifier, telescopic amplifier, current buffers, .etc to improve the CMRR of these circuits. This simple and effective circuit uses common mode deviating technique to improve CMRR at least 12dB while preserves CMRR bandwidth which is a novel technique in order to improve...
A modified regulated cascode structure having high output swing capability is presented. This structure is used in the implementation of a current mirror. The current mirror possesses wide input and wide output swing capabilities, suitable for low voltage operation. P-SPICE simulations at 0.25 ??m CMOS technology validate the proposed current mirror for currents from 30 nA to 220 ??A, at 1 V with...
Two modified regulated cascode amplifier (RCA) structures are presented that reduce the output compliance voltage requirements of conventional RCA. One structure utilizes a push-pull amplifier to enhance output resistance whereas the other structure incorporates a level shifter in the conventional RCA structure. P-SPICE simulations have been used to validate the proposed structures at ??0.6 V for...
This paper presents high Q and high current on-chip inductors manufactured in an innovative Radio Frequency (RF) Back End Of Line (BEOL), made of two 3 mum thick top copper levels, integrated in an Advanced Low Power 65 nm RF CMOS technology. Achieved inductors using this optimized RF BEOL are firstly reported, compared with those using one single thick copper level BEOL, and benchmarked with current...
Compact diode models normally available in commercial simulators like Spectre or HSPICE do not scale the series resistance with P-N distance. The standard diode models scale with drawn area, assuming the current is vertical. However the diodes used for ESD protection in CMOS are operating as lateral diodes, so the resistance should scale with width, not area. This is a serious problem for circuit...
In this paper, a 75 - 95 GHz wideband power amplifier (PA) in 0.13-mum CMOS is implemented to explore the feasibility of low-cost CMOS technology for use in 71 - 76 GHz, 81 - 86 GHz and 92 - 95 GHz fixed point-to-point link bands and the 77-GHz vehicular radar band. The fully-integrated design incorporates the power amplifier, matching networks, and input and output transmission line networks on-chip...
A non-self protection ESD scheme using grounded-gate, gate non-silicided (GG-GNS) drain/source silicide blocked (SBLK) ESD NFET offered in 45 nm SOI CMOS technology is presented based on a comprehensive study using the high current pulse characteristics. The results show that with a minimum SBLK width over drain/source, GG-GNS NFET can handle ~3.4 mA/mum current.
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