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In this paper we propose a variable-gain transimpedance amplifier suitable for low-power applications. Its noise, bandwidth and input impedance performance are similar to a more conventional regulated-cascode common-gate transimpedance with resistive load, with the same power consumption and gain performance. The proposed amplifier has, however, variable gain, which can be easily changed by setting...
This paper investigates the average-consensus problem of first-order discrete-time multi-agent networks in uncertain communication environments. Each agent can only use its own and neighbors' information to design its control input. To attenuate the communication noises, a distributed stochastic approximation type protocol is used. By using probability limit theory and algebraic graph theory, consensus...
A 1.1 mW 87 dB dynamic range 3rd order ΔΣ modulator is implemented in 0.18 μm CMOS technology for the audio applications. By adopting a feed-forward multi-bit topology, the signal swing at the output of the first integrator can be suppressed and only one simple current mirror single-stage OTA with 34 dB DC gain is used in the first integrator. The prototype modulator achieves 87 dB DR and 83.8 dB...
In this paper, analysis and design of a frequency dependent negative resistance (FDNR) based noise-shaping elliptic blocker filtering technique is presented. Due to its noise shaping characteristics, the circuit can provide a third-order low-pass elliptic response with an input referred noise density of 7.2nV/sqrtHz. The proposed circuit relaxes the noise-linearity trade-off a receiver chain by providing...
In this paper, the result of varying the supply voltage on the operation, speed and current supply of four voltage sense amplifier circuits for 1-Transistor DRAM memories is investigated. Utilizing the half-Vdd pre-charge, the sense amplifiers are designed to achieve the highest possible gain and noise margin, and are implemented in a 90 nm CMOS technology. For a supply of 1.2 V, the CurrentMirror...
This paper describes an implementation of a beam former monolithic microwave integrated circuit (MMIC) for the SKA demonstrator project known as EMBRACE using the SG25H1 silicon germanium process of IHP microelectronics. This process is qualified as a high-performance technology with npn-HBTs up to ft/fmax = 180/220 GHz.
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