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In this paper, we analyzes the coupling capacitance between TSV-TSV, TSV-Metal interconnects, and TSV-Active device. This paper presents a complete analysis of coupling capacitance of TSV-TSV structures. As TSV parasitic capacitance is less than other conventional IO structures' capacitance, therefore TSV technology results in lower I/O power consumption, which makes it suitable for low power applications...
Dimensional analysis is one of the most powerful modeling methods, where it is used to reduce the number of physical variables through combining two or more variables into a single dimension neutral one in order to simplify the process of describing a relationship among those variables. That makes curve fitting to obtain final equations simpler. In this paper, dimensional analysis is applied as a...
Modeling parasitic parameters of Through-Silicon Via (TSV) structures is essential in exploring electrical characteristics such as delay and signal integrity (SI) of circuits and interconnections in three-dimensional (3D) Integrated Circuits (ICs). This paper presents a complete set of self-consistent equations including self and coupling terms for capacitance of general multi-TSV structures. The...
Emerging 3D die-stacked DRAM technology is one of the most promising solutions for future memory architectures to satisfy the ever-increasing demands on performance, power, and cost. This paper introduces CACTI-3DD, the first architecture-level integrated power, area, and timing modeling framework for 3D die-stacked off-chip DRAM main memory. CACTI-3DD includes TSV models, improves models for 2D off-chip...
A wide-band lumped element model for a through silicon via (TSV) is proposed based on electromagnetic simulations. Closed form expressions for the TSV parasitics based on the dimensional analysis method are introduced. The proposed model enables direct extraction of the TSV resistance, self-inductance, oxide capacitance, and parasitic elements due to the finite substrate resistivity. The model's compactness...
This paper proposes an equivalent lumped element model for various multi-TSV arrangements and introduces closed form expressions for the capacitive, resistive, and inductive coupling between those arrangements. The closed form expressions are in terms of physical dimensions and material properties and are driven based on the dimensional analysis method. The model's compactness and compatibility with...
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