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This paper presents an analytic approach to obtain the optimum source and load impedance values for different criteria of maximum power gain, linearity and efficiency. A comparison of two identically rated commercially available 25W RF power transistors in silicon LDMOS and GaN-on-Si HEMT reveals that GaN HEMTs are relatively immune to optimization criteria popularly used by RF amplifier designers,...
We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared (NIR) emission around 1100 nm caused by band-to-band light emission in the silicon which is uniformly distributed across the lowly doped active light-emitting area. We also propose further improvements to exploit the full potential of this structure.
A 4500V RC-IGCT switching more than 10 kA in both switch and diode mode was developed for application in cascaded multilevel topologies. The performance was facilitated by using most of a 150 mm silicon wafer for a single device. Furthermore, the stray inductance of the gate bushing inductance was lowered an order of magnitude, and the use of an outer ring gate contributed significantly to lower impedance...
In this work we show the impact of surface cleaning on the dynamic characteristics of Au-free AlGaN/GaN Gated Edge Termination Schottky Barrier Diodes (GET-SBDs). It is demonstrated that the current dispersion (measured in pulsed regime) can be reduced by introducing a N2 plasma cleaning step in the anode metal deposition chamber. Moreover, diodes treated with N2 plasma show lower current drop after...
Gallium nitride (GaN) based High Electron Mobility Transistors (HEMTs) are candidates for the next generation of power electronic devices and are therefore subject of intense research activities worldwide. Technology CAD (TCAD) has proven a major impact on the optimization of silicon based device technologies. It is a logical follow up to provide accurate simulation tools, methods and models for GaN-based...
A new isolated Drive-by-Microwave (DBM) gate driver with a high-speed voltage monitoring for over current detection is proposed, which is composed of a 2.4GHz GaN/Si DBM transmitter, DBM receiver chip and compact isolated couplers in a low-cost printed circuit board. The fabricated DBM gate driver demonstrates a 200 Mbps isolated data transmission and a GaN power switching device's driving with a...
This paper reports on the reduction limit of switching loss in Si-IGBTs without increasing the on-state voltage. We focused on surge decrease and turn-off loss saturation with small gate resistance. It became clear that the surge decrease derives from a dynamic avalanche adjacent to the trench bottom and leads to the turn-off loss saturation. This avalanche phenomenon is suppressed by the reduction...
In this paper, we propose a new bi-directional high voltage PMOSFET that improves a back-gate bias effect due to WDMOS (Waveform Depletion MOS) structure. In WDMOS structure, plural trench gates are adjacent each other. Therefore, the silicon between trench gates is easily depleted and a back-gate bias effect can be suppressed. We present excellent characteristics of the bi-directional high voltage...
This paper reports on an industrial DHEMT process for 650V rated GaN-on-Si power devices. The MISHEMT transistors use an in-situ MOCVD grown SiN as surface passivation and gate dielectric. Excellent off-state leakage, on-state conduction and low device capacitance and dynamic Ron is obtained. Initial assessment of the intrinsic reliability data on the in-situ SiN is provided.
In this work, a thermally stable air-bridged matrix (ABM) AlGaN/GaN high electron mobility transistor (HEMT) with micromachined diamondlke carbon (DLC)/Titanium thermal-distributed layers was demonstrated. After removing the Si substrate beneath the HEMT, the DLC/Ti heat dissipation layers were deposited on the backside of the HEMT, and a significant breakdown voltage improvement was observed. The...
Ultra-fast silicon PiN diode is proposed by lateral structure with traps using silicon on insulator (SOI) substrate as shown in Fig. 1. The proposed lateral SOI silicon PiN diode achieved ultra-fast reverse recovery without waveform oscillation successfully. The proposed lateral SOI structure with traps will contributes to performance improvement of all of bipolar power devices including IGBT.
As GaN power devices emerge from research to industry, the characterization of these novel devices itself and its application in power electronic converters is essential. The purpose of this paper is to prove the capabilities of GaN technology using a novel 600 V normally-off GaN-on-Si transistor which shows no dynamic behavior of its on-resistance. A hard switching DC/DC converter prototype reveals...
We report on pn Ge solar cells grown on Ge substrates and transferred onto glass by wafer bonding. They perform similarly to cells on the native Ge substrate, whereas their energy conversion efficiency compares well with state-of-the-art stand alone Ge photovoltaic cells. We propose Germanium layer transfer and wafer bonding for the realization of effective multi-junction solar cells and versatile...
This article gives two new and simple methods to treat porous silicon material, including acid treatment and cathode reduction treatment, to improve luminescence properties of porous silicon material. The results show that: the processing of cathode reduction can improve luminescence stability of porous silicon; the processing of acid treatment can effectively improve luminescence intensity of porous...
A SiNx film is commonly used as a passivation and antireflection coating for P-type silicon solar cells, but for N-type silicon cells, the Al2O3 layer was used to passivate boron-doped emitter. In this paper, two different passivation and antireflection films, SiNx/Al2O3 system and SiO2/SiNx/Al2O3 system were designed for N-type silicon solar cells. In the optimization process, 30° was selected as...
A new vertical cylindrical cell with 25nm diameter bi layer poly-silicon channel for 3D NAND Flash memory is successfully developed. It achieves minimum cell area (4F2) without the need for pipeline connections. We introduced a thin amorphous silicon layer along with the oxide-nitride-oxide (ONO) gate stack inside the memory hole. This additional silicon layer protects the tunnel oxide during opening...
Thickness uniformity of the Ultra Thin SOI (UTSOI) substrates is one of the key criteria to control Vt variation of the planar FDSOI devices. We present an evolutionary approach to SmartCut™ technology which already allows achieving a maximum total SOI layer thickness variation of less than ± 10 Å on preproduction volume. Total thickness variation of ± 5 Å is targeted.
In this study, we use porous silicon based microcavity to detect glucose solution concentration in real time. With the aid of a portable fiber spectrophotometer, we recorded the changing of resonance dip position of the porous silicon microcavity in real time as a function of the changing of the concentration of the infiltrated glucose solution. Results show that the sensor has rapid response of 25...
To investigate the relation between optical property and size of the nano structure, the band structures, density of states, and optical properties of series nano structures embedded in SiO2 were calculated using the density functional theory-plane waves(DFT-PW) of first-principles method. The results show, the intermediate levels of Ge and Si nanostructure are at about 3.3 eV and 4.3 eV above Fermi...
Photonic Networks-on-Chip (NoC) is considered as a promising candidate to interconnect a large number of processing cores. The heart of a photonic NoC is the on chip photonic interconnection network which is composed of silicon waveguides and optical routers. In this paper, we propose a scalable and non-blocking passive optical router design using micro-ring resonators (MRRs), namely the generic wavelength-routed...
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