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III-nitrides InGaN solar cells have exhibited many favorable physical properties for space photovoltaic (PV) applications. Here we demonstrate the first nonpolar and semipolar InGaN/GaN multiple-quantum-well (MQW) solar cells grown on nonpolar m-plane and semipolar (2021) plane bulk GaN substrates. The optical properties and PV performance of these InGaN solar cells were systematically studied, including...
CMOS utilizing high mobility Ge/III-V channels on Si substrates is expected to be one of the promising devices for high performance and low power integrated systems in the future technology nodes, because of the enhanced carrier transport properties. In addition, Tunneling-FETs (TFETs) using Ge/III-V materials are regarded as one of the most important steep slope devices for the ultra-low power applications...
Vertical GaN Schottky barrier diodes (SBDs) were fabricated on free-standing GaN substrates with low dislocation density. Vertical GaN-SBDs with a forward current of 5A and a blocking voltage of 600V exhibit the most superior reverse recovery characteristics among GaN, SiC, and Si diodes. We also confirmed stable forward and reverse aging characteristics for 1000 hours at 150 °C.
This paper reports a normally-off high voltage hybrid Al2O3/GaN gate-recessed MOSFET fabricated on silicon substrate. The normally off operation was implemented by digital gate recess using an oxidation and wet etching based AlGaN barrier remove technique. The Al2O3/GaN MOSFET features a true normally off operation with a threshold voltage of 2 V extracted by the linear extrapolation of the transfer...
In this work, a thermally stable air-bridged matrix (ABM) AlGaN/GaN high electron mobility transistor (HEMT) with micromachined diamondlke carbon (DLC)/Titanium thermal-distributed layers was demonstrated. After removing the Si substrate beneath the HEMT, the DLC/Ti heat dissipation layers were deposited on the backside of the HEMT, and a significant breakdown voltage improvement was observed. The...
Sapphire is known as the most commonly used substrate, and it is widely used as the substrate for the growth of GaN films. In this paper, Sapphire substrate is pretreated by melted KOH solution, in which the triangle patterned etched pits are formed, and the interpretation is theoretically given about the triangle shape. In additional, compared the results which are obtained when the etched temperature...
We reported the InGaN/GaN multiple quantum well (MQW) blue light-emitting diodes (LED) grown on patterned sapphire substrates (PSS). The surface morphologies for samples grown on the "dome" PSS in different growth stages were observed by scanning electron microscopy (SEM). The fully coalescence of the growth fronts was achieved for 30 minute growth sample with the "bumps" surface...
CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of key devices for high performance and low power advanced LSIs in the future. In addition, the heterogeneous integration of these materials with Si can provide a variety of More-than-Moore and Beyond CMOS applications, where various III-V/Ge functional devices can be co-integrated. In this presentation, we review...
We demonstrate selectively-grown GaAs nano/micro structures on silicon substrates by molecular beam epitaxy. Hexagonal or rectangular shaped GaAs crystals, depending on the orientation of the silicon substrate, were formed inside the silicon-dioxide-masked nanoholes at 630°C. Clear facets, which are the low-energy {011} planes, indicate single-crystalline nature of the growth. GaAs/InAs/GaAs structure...
We report the epitaxial growth, fabrication, electrical and optical characteristics of GaN/AlGaN p-i-n avalanche photodiodes. The effects of polarization charge density on the dark current and the spectral responsivity of GaN/AlGaN p-i-n avalanche photodiodes are investigated in detail.
The AlN/diamond structure is an attractive combination for SAW devices and its application at high frequencies. In this work, the synthesis of AlN thin films by reactive sputtering has been optimized on diamond substrates in order to process high frequency devices. Polished microcrystalline and as-grown nanocrystalline diamond substrates have been used to deposit AlN of different thickness under equal...
Some sputtering processes of GaAs(Ti) onto c-GaAs have been carried out in order to obtain thin films as candidates to be intermediate band photovoltaic materials. This work presents the results obtained in the study of the absorptance, from transmittance and reflectance responses, in samples obtained at different conditions of temperature and power during the sputtering deposition.
The work presented here aims to reduce the cost of multijunction solar cell technology by developing ways to manufacture them on cheap substrates such as silicon. In particular, our main objective is the growth of III-V semiconductors on silicon substrates for photovoltaic applications. The goal is to create a GaAsP/Si virtual substrates onto which other III-V cells could be integrated with an interesting...
The growth of metamorphic III-V semiconductors on substrates of dissimilar lattice parameter is of interest for the engineering of optoelectronic devices for which the cost of the substrate would otherwise limit the applicability of the material. Such is the case of the antimonides, which are very appropriate for small band gap photovoltaics or thermophotovoltaics. To further increase the efficiency...
InGaAsP membranes are bonded to carrier substrates using Au/Au and Van der Waals and bonding. Photonic crystal defect cavities within membranes bonded onto semiconductor and sapphire substrates are found to lase continuous wave under optical excitation.
Two new fields are introduced to MEMS/NEMS: a nanogenerator that harvests mechanical energy for powering nanosystems, and strained induced piezotronics for smart MEMS. Fundamentally, due to the polarization of ions in a crystal that has non-central symmetry, such as ZnO, GaN and InN, a piezoelectric potential (piezopotential) is created in the crystal by applying a stress. The principle of harvesting...
We report on the epitaxial growth, fabrication, and characterization of full-color InGaN/GaN dot-in-a-wire nanoscale LEDs on Si(111), which can exhibit an internal quantum efficiency of ~ 45% and negligible saturation up to ~ 300 A/cm2.
Frame assisted membrane transfer process was developed to transfer large area crystalline semiconductor nanomembranes on flexible plastic substrates. InP nanomembranes as large as 2cm×2cm was transferred successfully. Large area flexible photodetectors, solar cells and LED arrays all have been demonstrated experimentally, based on transferred InP nanomembranes.
Hybrid integration of III-V compound semiconductors onto silicon-on-insulator (SOI) substrate is discussed from material, device and application perspective. Recent progress in integration technology and device optimization is reviewed.
We characterize the microwave loss in coplanar waveguides (CPWs) on AlGaN/GaN HEMT buffer layers on high-resistivity silicon (HR-Si) substrates, up to 110 GHz. To our knowledge, this is the first broadband characterization of CPWs on GaN-on-Si. Conventional CPWs on commercially available AlGaN/GaN on HR-Si HEMT layers show a loss as low as 0.8 dB/mm at 110 GHz. Losses are further reduced by etching...
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