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The author previously proposed three types of low-loss diodes that are inexpensive and capable of operating at high temperatures. We confirmed that in the proposed devices, that on-state voltage is lower than in standard Schottky Barrier Diodes (SBD) and thermal runaway does not occur at high temperatures. Based on this outcome, we conducted another study, described here, in which we used the proposed...
Industry is adopting GaN HEMTs in 3kW or higher power systems, which exhibit excellent figure of merit compared to conventional Silicon devices. Thermal considerations as well as circuit parasitics in high power and high density GaN-based systems play a significant role in achieving overall performance. A high density and high efficiency Insulated Metal Substrate (IMS) based GaN HEMT power module...
The main objective of the Delphi4LED project (funded by the Ecsel European joint undertaking) is to develop a standardized method to create multidomain LED based design and simulation flow for the solid-state lighting industry. Tools and standards will be developed at various levels to enable design and manufacturing of more reliable and cost effective LED based lighting solutions which can be brought...
Multi-junction solar cells based on III-V materials are widely utilized for space applications owing to their light weight and very high efficiency. When used for terrestrial applications, they are used in concentrator systems to boost the efficiency and reduce the effective solar cell area to enhance the performance-to-cost ratio. However, the efficiency drops as the light intensity goes beyond a...
This paper describes the design of the transceiver, which is the implementation of the physical layer of EIA/TIA-485 standard. This circuit is a part of a more complex System on Chip designed in 130 nm CMOS technology. The problems encountered during the design process was described. The crucial issue was the relatively high voltage range, from −7 V to 12 V, that may appear on the pins of the SoC...
We demonstrated an integration of enhancement-mode single-crystalline n-channel thin-film transistor (TFT) and n+/p diodes for light detection/emission based on the single-crystalline GeSn alloy grown on a transparent substrate. Owing to the excellent crystal quality of GeSn layer and a high-quality n+/p junction, a record-high electron mobility of 271 cm2/Vs and a room-temperature near-infrared electroluminescence...
Silicon semiconductor devices have remarkably been improved by the process scaling and introduction of some boosting technologies such as high-k/metal gate and strained silicon. However further improvement is quite difficult from the view point of mobility of silicon material. To overcome this problem, an increasing amount of attention has been devoted to the investigation of some higher carrier mobility...
Ion implantation and plasma etching are essential process steps for manufacturing semiconductor devices. The damage created by those process steps degrades device characteristics and reliability. Therefore, it is necessary to minimize the damage. The damage structure created by ion implantation is reconstructed during an annealing step, and p-n junction is formed as designed in advance. On the other...
Ion implantation technique for controlling n- or p-type conduction has been a significant challenge for GaN-based high-power devices to achieve levels approaching their theoretical limits of performance. Previous studies on n-type conduction of GaN through Si ion implantation achieved 86% [1] and approximately 100% [2] of activation rate after annealing at 1250 and 1400 °C, respectively. Such high-temperature...
In this paper, a novel superjunction lateral double-diffused MOSFET (SJ-LDMOS) based on the bulk electric field modulation is proposed. The new structure is characterized by adding the multiple floating buried layers (MFBL) into the substrate/epitaxial layer. In this way, the high bulk electric field under the drain diffusion edge is reduced and the overall bulk electric field distribution is optimized...
A novel concept for a BCD technology is presented which comprises the processing of the wafer on the thinned backside and which offers — similar to SOI technology — a full dielectric isolation of power devices. Limitations of the breakdown voltage of p-LDMOS encountered in conventional BCD technologies are overcome by replacing the commonly applied deep n well layer by an n+ region formed on the wafer...
A scattering matrix subtraction method is employed within the mode-matching technique (MMT) to model right-angle substrate integrated waveguide (SIW) junctions. The advantage of this approach lies in the fact that generalized scattering matrices of inline SIW waveguide circuits, including simple bi- and trifurcations are computed first. In a second step, the scattering matrices of regular waveguide...
17-μm Al-foil/n-4H-SiC Schottky junctions with the foils as contacts are fabricated in order to investigate the impacts of annealing on their electrical characteristics. By measuring their current-voltage and capacitance-voltage characteristics, the ideality factor and Schottky barrier height (SBH) are estimated to be 1.31 and 1.37 eV for junctions after annealing at 673 K, respectively.
A thickness controlled dual junction GaAs//Si solar cell for current matching was fabricated and demonstrated. The optically thin GaAs top cell grown by metal-organic vapor phase epitaxy (MOVPE) was directly integrated on the Si bottom cell by surface-activated bonding (SAB) method. Owing to the optically thin (∼300 nm) GaAs top sub-cell, the operation of current-matched dual junction cell was observed...
Electrical properties of p+-GaAs/n-GaN and n+-GaAs/n-GaN, heterojunctions fabricated by using surface-activated bonding (SAB) are investigated. The measured C-V characteristics of p+-GaAs/n-GaN and n+-GaAs/n-GaN junctions are in quantitative agreement with modeled ones obtained for the interface states density and the conduction-band discontinuity of 1.5×1014 cm−2 eV−1 and 0.63 eV, respectively.
Power electronic converters use semiconductors to satisfy the needs of different applications. Nowadays, these semiconductors are mainly based on Silicon (Si), which can be processed virtually without defects. However, the limits of Si are being reached and in consequence, Si based semiconductors have limited voltage blocking capability, limited heat transfer capability, limited efficiency and maximum...
The material and interface engineering of magnetic tunnel junctions (MTJ) is the key for the future of spin transfer torque based random access memories (STT-RAM).
The prospect of spintronic devices based on two-dimensional metal dichalcogenide material (2DMX2) originate from their long spin life time [1] and 100% out-of-plane spin polarization [2].
The possibility of the surface-activated bonding (SAB) technologies for fabricating III-V-on-Si hybrid tandem solar cells is discussed. Although the electrical conduction across the bonding interfaces is influenced by the interface states introduced during the surface-activation process, their impacts are likely to be lowered by combining more heavily-doped bonding layers and the annealing process...
Transmission line method (TLM) structures are often employed to extract contact resistivity between a metal and a doped semiconductor region. In this article we treat the situation where the doped region is junction-isolated from the substrate. The junction isolation may be leaky resulting in erroneous parameter extraction. The effect of junction leakage is treated both theoretically and through exemplary...
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