Search results for: V.N. Jmerik

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article

Selective area growth of N-polar GaN nanorods by plasma-assisted MBE on micro-cone-patterned c-sapphire substrates

V.N. Jmerik, N.V. Kuznetsova, D.V. Nechaev, T.V. Shubina, more

Journal of Crystal Growth > 2017 > 477 > C > 207-211

The site-controlled selective area growth of N-polar GaN nanorods (NR) was developed by plasma-assisted MBE (PA MBE) on micro-cone-patterned sapphire substrates (µ-CPSS) by using a two-stage growth process. A GaN nucleation layer grown by migration enhanced epitaxy provides the best selectivity for nucleation of NRs on the apexes of 3.5-µm-diameter cones, whereas the subsequent growth of 1-μm-high...

article

Pulsed growth techniques in plasma-assisted molecular beam epitaxy of AlxGa1−xN layers with medium Al content (x=0.4–0.6)

D.V. Nechaev, P.N. Brunkov, S.I. Troshkov, V.N. Jmerik, more

Journal of Crystal Growth > 2015 > 425 > C > 9-12

Paper presents the comparative analysis of Metal Modulated Epitaxy (MME) and Droplet Elimination by Thermal Annealing (DETA) techniques in the low-temperature plasma-assisted MBE of thick Al_xGa_1−xN layers with the medium Al content (x=0.4–0.6) grown under the highly metal-rich conditions. Atomically smooth surface with RMS of about 0.4nm across the area of 2×2µm² has been achieved for AlGaN layers...

article

Metastable nature of InN and In-rich InGaN alloys

S.V. Ivanov, T.V. Shubina, T.A. Komissarova, V.N. Jmerik, more

Journal of Crystal Growth > 2014 > 403 > Complete > 83-89

The paper provides a thermodynamic insight into the metastable nature of InN and In-rich InGaN alloys, based on experimental studies of their plasma-assisted MBE growth and high-temperature decomposition, as well as on theoretical modeling of nitrogen vacancy behavior. This instability may easily result in occurrence of metallic In nanoparticles in the bulk of In(Ga)N films and in the vicinity of...

article

Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE

D.V. Nechaev, P.A. Aseev, V.N. Jmerik, P.N. Brunkov, more

Journal of Crystal Growth > 2013 > 378 > Complete > 319-322

Crystalline properties of (1–2)-μm-thick AlN buffer layers grown by plasma-assisted molecular-beam epitaxy (PA MBE) on c-Al ₂ O ₃ substrates with different AlN nucleation layers have been studied. The best quality layers are obtained on 50-nm-thick nucleation AlN layers grown by a migration enhanced epitaxy (MEE) at substrate temperature of 780°C. In this case the buffer layers possess...

article

Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring

V.N. Jmerik, A.M. Mizerov, D.V. Nechaev, P.A. Aseev, more

Journal of Crystal Growth > 2012 > 354 > 1 > 188-192

Low-temperature (<750°C) growth of thick AlN epilayers on c-sapphire by plasma-assisted molecular-beam epitaxy under the Al-rich conditions (F _Al /F _N⁎ <1.4) is reported here. Short periodic Al-flux interruptions controlled precisely by laser reflectometry ensure continuous growth of droplet-free and atomically smooth AlN films (rms<2ML over 4μm ² ) with a growth rate...

article

Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy

A.M. Mizerov, V.N. Jmerik, M.A. Yagovkina, S.I. Troshkov, more

Journal of Crystal Growth > 2011 > 323 > 1 > 68-71

Comparative study of growth kinetics of the Al _x Ga _1−x N (x=0–1) layers grown by plasma-assisted molecular beam epitaxy (PA MBE) under different growth conditions (group III to activated nitrogen and Al to Ga flux ratios) is presented. The strong influence of elastic stress on the surface morphology, growth rate and Al content in Al _x Ga _1−x N (x=0–1) layers is most...

article

AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique

V.N. Jmerik, T.V. Shubina, A.M. Mizerov, K.G. Belyaev, more

Journal of Crystal Growth > 2009 > 311 > 7 > 2080-2083

Al-rich AlGaN layers and quantum well (QW) structures with a reasonable structural quality have been grown by plasma-assisted molecular beam epitaxy (PA-MBE) under metal-rich stoichiometric conditions directly on c-sapphire. The bowing parameter of 1.1eV for the compositional dependence of AlGaN band gap energy has been determined using an electron-probe microanalysis, Raman spectroscopy and optical...

article

Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates

V.N. Jmerik, A.M. Mizerov, T.V. Shubina, M. Yagovkina, more

Journal of Crystal Growth > 2007 > 301-302 > Complete > 469-472

We report on the state-of-the-art parameters of GaN PA MBE layers grown on GaN/c-Al ₂ O ₃ MOVPE templates and compare the structural and optical properties of In _x Ga ₁₋ _x N layers grown under different conditions on top of the GaN–MBE/GaN–MOVPE/Al ₂ O ₃ buffer structures. Atomically smooth and structurally perfect GaN and In _0.14 Ga ...

article

Plasma-assisted MBE growth and characterization of InN on sapphire

S.V. Ivanov, T.V. Shubina, V.N. Jmerik, V.A. Vekshin, more

Journal of Crystal Growth > 2004 > 269 > 1 > 1-9

We report on a close correlation between the growth conditions of InN/Al ₂ O ₃ (0001) epilayers grown by plasma-assisted molecular beam epitaxy (MBE); their optical properties in the IR range, and the In clustering in the layers. High-spatial resolution techniques, namely micro-cathodoluminescsence, back-scattered electron imaging and energy dispersive X-ray analysis, were used to...

article

Coaxial rf-magnetron nitrogen activator for GaN MBE growth

V.N. Jmerik, V.V. Mamutin, V.A. Vekshin, T.V. Shubina, more

Materials Science & Engineering B > 1999 > 59 > 1-3 > 60 - 64

Novel compact coaxial magnetron nitrogen activator with a radio frequency (rf) capacitively-coupled discharge has been used for the first time for GaN molecular beam epitaxial growth on different substrates, including GaAs(113). Optical emission spectra of the discharge have been studied as a function of nitrogen flow rate, rf power, and magnetic field, focusing on first negative (391 nm) and second...

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Keywords

A3. MOLECULAR BEAM EPITAXY (8)
B1. NITRIDES (6)
B2. SEMICONDUCTING III–V MATERIALS (3)
A3. MIGRATION ENHANCED EPITAXY (2)
A1. DESORPTION (1)
A1. DISLOCATION (1)
A1. GROWTH MODELS (1)
A1. HALL EFFECT AND MAGNETORESISTANCE (1)
A1. INGAN (1)
A1. LOCALIZATION (1)
A1. LOCALIZED PLASMONS (1)
A1. MORPHOLOGICAL STABILITY (1)
A1. NANOSTRUCTURES (1)
A1. OPTICAL SPECTROSCOPY (1)
A1. PHASE SEPARATION (1)
A1. PHOTOLUMINESCENCE (1)
A1. STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES (1)
A1. SUBSTRATES (1)
A3. FORMATION ENTHALPY, CONGRUENT EVAPORATION, METAL/SEMICONDUCTOR COMPOSITES (1)
A3. PLASMA-ASSISTED MOLECULAR BEAM EPITAXY (1)
A3. SELECTIVE EPITAXY (1)
B1. INN (1)
B1. INN AND INGAN, IN NANOPARTICLES (1)
B1. SAPPHIRE (1)
B2. SEMICONDUCTING ALUMINIUM COMPOUNDS (1)
B2. SEMICONDUCTING ALUMINUM COMPOUNDS (1)
B2. SEMICONDUCTING INDIUM COMPOUNDS (1)
B3. LIGHT-EMITTING DIODES (1)
GAN (1)
MOLECULAR BEAM EPITAXY (1)
NITROGEN (1)
OPTICAL EMISSION SPECTRUM (1)
PLASMA SOURCE (1)
RF DISCHARGE (1)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 78.30.2J (1)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 78.66.FD (1)
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