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Selective area chemical beam epitaxy (CBE) has been investigated for GaAs and GaInP materials. Three topics are considered in this work: the critical temperature for selective growth, the compositional variation of GaInP on patterned surfaces and the topology of the localized epitaxy. The major results of this study are: (i) the decrease of the growth rate appears to lower drastically the critical...
Quasiplanar GaInP/GaAs heterojunction bipolar transistors (HBTs) with selective regrowth of the collector contact are reported. Such devices have a planar surface topology which should allow large scale integration. The multilayer HBT structure and the selective regrown collector contact are realised by chemical beam epitaxy (CBE). Cutoff frequency and maximum oscillation frequency of 30 and 25 GHz...
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