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We report the growth of gallium arsenide epilayers on the surface of single-crystal NiSb having metallic conduction. The gallium arsenide epilayers were grown by molecular beam epitaxy under conditions typical of the fabrication of homoepitaxial structures. Structural and morphological characterization of the GaAs films showed that the growth process involved a transition from a textured polycrystal...
Structurally perfect NiSb single crystals ≃25 mm in diameter and 250 mm in length were grown by the Bridgman method. Polishing etch compositions were selected for the preparation of NiSb substrate surfaces.