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Reliability/Uniformity of resistance switching in Ti/HfO2/Pt memory structure was improved by inserting an interfacial layer of 5nm-thick TiO2 between Ti and 45nm-thick HfO2. As a native oxide of Ti, TiO2, effectively limits the disorder migration of oxygen from HfO2 to Ti layer, and provides the more chemically-stable and morphologically-uniform interfaces with both the Ti electrode and the HfO2...