Search results for: H. Horikawa

Items from 1 to 18 out of 18 results

article

Unique clinical and serological features of bullous pemphigoid associated with dipeptidyl peptidase‐4 inhibitors

H. Horikawa, Y. Kurihara, T. Funakoshi, N. Umegaki‐Arao, more

British Journal of Dermatology > 178 > 6 > 1462 - 1463

article

Detection of Fomitiporia torreyae and Fulviformes umbrinellus by multiplex loop‐mediated isothermal amplification (mLAMP) for diagnosis of Japanese pear dwarf

S. Fukuta, H. Nagai, R. Suzuki, Y. Matsumoto, more

Annals of Applied Biology > 170 > 2 > 170 - 178

Japanese pear dwarf, caused by the fungi Fomitiporia torreyae or Fulviformes umbrinellus, is one of the most important diseases affecting Japanese pear (Pyrus pyrifolia var. culta). To diagnose this disease, a multiplex loop‐mediated isothermal amplification (mLAMP) reaction using primer sets designed from the rDNA internal transcribed spacer (ITS) sequences of F. torreyae and F. umbrinellus was developed...

article

Clinical features of knee osteoarthritis in patients with sporadic inclusion body myositis

K. Sugie, N. Eura, M. Sugie, T. Shiota, more

Neuromuscular Disorders > 2016 > 26 > S2 > S202

article

Reproductive cycle, spawning frequency and batch fecundity of the female whitefin jack Kaiwarinus equula in the East China Sea

M. Yoneda, K. Futagawa, M. Tokimura, H. Horikawa, more

Fisheries Research > 2002 > 57 > 3 > 297-309

Sexual maturity, annual reproductive cycle, spawning frequency, and batch fecundity of the female whitefin jack, Kaiwarinus equula, were examined in specimens collected from the East China Sea between April 1996 and October 1999. The fork length (FL) at 50% sexual maturity was 172.4mm. Females with mature and spawning stage ovaries were collected between May and October, when the mean gonadosomatic...

article

A new method for fabricating SMA/CFRP smart hybrid composites

Ya Xu, K. Otsuka, H. Yoshida, H. Nagai, more

Intermetallics > 2002 > 10 > 4 > 361-369

In order to suppress the microscopic mechanical damages in composite system, and thus to increase the reliability of carbon fiber reinforced plastics (CFRP), a smart composite SMA/CFRP is attracting much attention. In this application, the shape memory alloy (SMA) is expected to exert compressive stress to CFRP by reverse transformation upon heating after fabrication. However, one big problem in the...

article

Age and growth of the lizardfish Saurida sp. 1 in the East China Sea using otolith ring marks

M. Yoneda, T. Sakai, M. Tokimura, H. Horikawa, more

Fisheries Research > 2002 > 55 > 1-3 > 231-238

The age and growth of the lizardfish Saurida sp. 1 (Japanese name: Kuroeso), collected in the East China Sea from April 1998 to March 2000, were examined using polished thin sections of otolith. Length-frequency distributions clearly showed differences in the range of sizes between the sexes. All specimens larger than 400mm in fork length were females. Monthly changes in the frequency of appearance...

article

Ti-content and annealing temperature dependence of transformation behavior of TiXNi ₍ ₉ ₂ _- _X )Cu ₈ shape memory alloys

S.M. Tan, S. Miyazaki, T. Ueki, H. Horikawa

Materials Science & Engineering A > 1997 > 230 > 1-2 > 132-138

Ti-content and annealing temperature dependence of the transformation behavior of Ti _X Ni ₍ ₉ ₂ _- _X )Cu ₈ _. ₀ (at.%) (X = 49.0-51.0) alloys was investigated by varying the annealing temperature from 573 to 1273 K. It was found that the peak temperature of B2-B19 transformation (O ^* ) increases with increasing annealing temperature from 673 to...

article

Microampere laser threshold at 80°C with InGaAs/GaAs/InGaP buried heterostructre strained quantum well lasers

K. Nakamura, S. Oshiba, M. Nakajima, S. Gotoh, more

Journal of Crystal Growth > 1997 > 170 > 1-4 > 377-382

An extremely low CW threshold current of 670 μA and a high slope efficiency of 0.14 W/A at a high junction temperature of 80°C were obtained with a 200 μm long Al-free InGaAs/GaAs/InGaP buried heterostructure (BH) quantum well laser grown by three-step metal organic vapor phase epitaxy (MOVPE). The maximum energy conversion efficiency of a 500 μm long laser was as high as 50% at a output power level...

article

Characteristics of Ti ₅ ₀ Pd ₃ ₀ Ni ₂ ₀ high-temperature shape memory alloy

D. Golberg, Ya Xu, Y. Murakami, S. Morito, more

Intermetallics > 1995 > 3 > 1 > 35-46

The decrease in critical stress for slip with increasing temperature leads to the introduction of permanent strain and thus deteriorates shape memory (SM) characteristics of high-temperature SM alloys. Thermomechanical treatment consisting of cold-rolling and subsequent annealing at various temperatures, was applied for the first time to improve the high-temperature SM characteristics of the Ti ...

article

Higher power InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum well lasers grown by three step MOVPE

Y.K. Sin, H. Horikawa, M. Nakajima, T. Kamijoh

Electronics Letters > 1993 > 29 > 3 > 253 - 255

The first demonstration of distributed feedback InGaAs-GaAs buried heterostructure strained quantum well lasers with In/sub 0.49/Ga/sub 0.51/P cladding layers entirely grown by a three step MOVPE process is reported. Uncoated distributed feedback buried heterostructure lasers with a pn InGaP current blocking junction on a p/sup +/-GaAs substrate show a low laser threshold of 3.2 mA and a high output...

article

High power 0.98 mu m InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum well lasers

Y.K. Sin, H. Horikawa

Electronics Letters > 1993 > 29 > 10 > 920 - 922

Data are presented on device results from InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum well lasers entirely grown by a three step MOVPE process showing a laser threshold of 2.9 mA and a maximum monomode output power of 58 mW, both measured CW at RT. The monomode oscillation is obtained even for an injection current of 150 mA (21 times the laser threshold) with a sidemode...

article

Ultralow laser threshold and high speed InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers for optical interconnects

Y.K. Sin, H. Horikawa, Y. Matsui, T. Kamijoh

Electronics Letters > 1993 > 29 > 10 > 873 - 875

The authors report ultralow laser threshold and high speed InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers entirely grown by a three step MOVPE process for computer interconnects. Uncoated 350 mu m-long buried heterostructure lasers show an extremely low laser threshold of 0.8 mA and a high slope efficiency of 0.41 mW/mA per facet both measured CW at RT, and a high relaxation...

article

High power InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers grown by two step MOVPE

Y.K. Sin, H. Horikawa, T. Kamijoh

Electronics Letters > 1993 > 29 > 2 > 240 - 242

Data are presented on device results from buried heterostructure InGaAs-GaAs strained quantum well lasers with In/sub 0.49/Ga/sub 0.51/P cladding layers ( lambda /sub L/=980 nm). AR-HR coated buried heterostructure lasers with a p-n InGaP current blocking junction show low laser thresholds of 3.1 mA and high output powers of 95 mW both measured CW at RT. This is the first demonstration of InGaAs-GaAs-InGaP...

article

InGaAs-GaAs-InGaP channel guide strained quantum well lasers with output powers over 300 mW

Y.K. Sin, H. Horikawa, K. Yamada, T. Kamijoh

Electronics Letters > 1992 > 28 > 13 > 1234 - 1235

Device results are reported from channel guide InGaAs-GaAs strained quantum well lasers ( lambda /sub L/=980 nm) with In/sub 0.49/Ga/sub 0.51/P cladding layers. AR-HR coated channel guide lasers with a p-n-p InGaP current blocking junction on a p/sup +/-GaAs substrate show high output powers of 302 mW which is the highest output power obtained from InGaAs-GaAs-InGaP lasers.<<ETX>>

article

FM efficiency and spectral linewidth in two-active-section MQW DBR laser

T. Kunii, Y. Matsui, H. Horikawa, Y. Ogawa, more

Electronics Letters > 1992 > 28 > 10 > 963 - 965

A large and red-shifted FM response and a spectral linewidth of a few megahertz were obtained in a two-active-section MQW DBR laser. It is found that the FM efficiency can be enhanced by using the inhomogeneity in alpha parameters with a high threshold current density device and that there is a tradeoff in the relationship between spectral linewidth and FM efficiency.<<ETX>>

article

High power, singlemode InGaAs-GaAs-AlGaAs strained quantum well lasers with new current blocking scheme using GaAs layers grown by MBE at low substrate temperatures

Y.K. Sin, H. Horikawa, I. Matsuyama, T. Kamijoh

Electronics Letters > 1992 > 28 > 8 > 803 - 804

Device results from laser diodes with a new current blocking scheme using low temperature (LT) GaAs grown by MBE at 200 degrees C are reported. The laser structure is grown by metal organic vapour phase epitaxy on channelled MBE-grown LT-GaAs. The LT-GaAs is shown to be effective in preserving the current blocking properties for InGaAs-GaAs-AlGaAs strained quantum well lasers. The CW laser threshold...

article

Narrow linewidth (85 kHz) operation in long cavity 1.5 mu m-MQW DBR laser

T. Kunii, Y. Matsui, H. Horikawa, T. Kamijoh, more

Electronics Letters > 1991 > 27 > 9 > 691 - 692

An extremely narrow linewidth of 85 kHz operation was obtained at 10 mW output power in a 2.16 mm long, 1.5 mu m-MQW DBR laser. This is the narrowest linewidth ever reported in a semiconductor laser diode without an external cavity.<<ETX>>

article

Reliability of 1.3 μm V-grooved inner-stripe laser diodes under high-power operation

S. Oshiba, A. Matoba, H. Horikawa, Y. Kawai, more

Electronics Letters > 1986 > 22 > 8 > 428 - 429

Aging tests of 1.3 μm laser diodes were performed under extremely high power levels up to 85% of the maximum CW output powers. We have verified high reliability under high power levels as high as 75% of the maximum CW output powers at room temperature. The median lifetime is estimated to be 7??10⁴ h at 75% of the maximum CW output power.

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