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A comprehensive description of band gap and effective masses of III–V semiconductor bulk and ultra-thin body (UTB) structures under realistic biaxial and uniaxial strain is given using numerical simulations from four different electronic structure codes. The consistency between the different tools is discussed in depth. The nearest neighbor sp3d5s* empirical tight-binding model is found to reproduce...
We investigate the operation and performance of planar SiGe/Si and In0.53Ga0.47As/In0.7Ga0.3As/In0.53Ga0.47As hetero-junction Semiconductor on Insulator (ScOI) Tunnel FET (TFET) devices. The alignment between the hetero-junction, the gate edge and the source junction is systematically shifted to search for the highest ON-current and the lowest Subthreshold Swing (SS). A slight positive misalignment...
Based on the material analysis of the SiN layers presented in part I of this paper, we develop accurate atomistic and electrical models for the silicon nitride (SiN)-based nonvolatile memory devices, taking into account the candidate SiN defects responsible for the memory effect. Our analysis points out the role of the hydrogen atoms and Si dangling bonds in the trapping properties of SiN films with...
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