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The implementation and operation of the nonvolatile ferroelectric memory (NVM) tunnel field effect transistors with silicon-doped HfO2 is proposed and theoretically examined for the first time, showing that ferroelectric nonvolatile tunnel field effect transistor (Fe-TFET) can operate as ultra-low power nonvolatile memory even in aggressively scaled dimensions. A Fe-TFET analytical model is derived...
This work reports a comparison of high-k Al2O3/HfO2/Al2O3 dielectric stack Tunnel FETs with both vertical tunneling and lateral tunneling, as non-volatile memory (NVM) cells. Tunnel FET NVM are fabricated and characterized to evaluate their potential as low power memory operation. These memory cells can be programmed with voltages from −10V to −15V (p type devices) and show extremely stable memory...
This work reports for the first time the demonstration of non-volatile memory (NVM) cells using a Tunnel FETs (TFET) with high-k Al2O3/HfO2/Al2O3 dielectric stack and vertical tunneling. Vertical tunneling TFET devices are fabricated and characterized to evaluate their potential as low power memory operation. The memory cell can be programmed with voltages from −10V to −15V (p type) and show extremely...
Interest in Ferroelectric FETs originates from their potential as non-volatile memories and, more recently, as abrupt switches. In this work, we focus on the role of the Curie temperature of the gate stack on the performance of Fe-FETs. The proposed study is based on thin film SOI Fe-FETs using organic ferroelectric gate stacks (45 nm P(VDF-TrFE) 70%-30% layer on top of 10 nm thermal SiO2). The device...
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