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In this paper, physical modeling of a GaN HEMT is proposed, with the objective of device design optimization for application in a high frequency DC/DC converter. From the point of view of a switching application, physical model for input, output and reverse capacitance as well as for channel resistance is very important, since the aforementioned parameters determine power losses in the circuit. The...
We present a powerful technique for the characterization of FDSOI devices. For example, in CMOS designs, the evaluation of threshold voltage for N and also P-MOSFETs is compulsory and is performed in separate devices. We propose to extract the threshold voltage for both types of transistors simultaneously by using capacitance measurements in thin fully depleted SOI PIN gated diodes. The N+ and P+...
We report a device physics theory and compact model that predicts the threshold voltage mismatch for CMOS transistors using the halo implant. This model is able to fit CMOS VT mismatch across temperature and device geometry, validating the underlying physical argument. A bias method is presented and shown to recover part of the matching degradation due to the halo implant.
A novel electro-optical demodulating detector with 3-dimensional electrodes is presented in this paper. Thanks to a large substrate thickness, this device can combine high responsivity and demodulation contrast in the infrared spectral region, as needed in Time-of-Flight optical ranging applications. Proof-of-concept large-area detectors are fabricated on Floating Zone silicon, using Deep Reactive...
New technologies and tools are among the most important ways of covering the technological gap required in process optimization and increased competitiveness. Where conventional techniques are mature and robust enough to guarantee stable performance, smart production should contribute to developing more flexible, cost optimal and environmental friendly production processes. Powerful ICT (Information...
The International Technology Roadmap for Semiconductors (ITRS) is probably the single most important document governing the direction of the semiconductor manufacturing industry. The Factory Integration (FI) chapter seeks to define a roadmap for semiconductor factories and enterprise systems. This roadmap has gone through a significant revision over the past 2 years with a focus on commonality, integration,...
Recently applying an intelligent self-curing system to get a feedback from the LED light in order to control its intensity with driving current has attracted so much attention. This study presents a silicon stripe-shaped photodiode which is successfully designed and fabricated using a 2цm BiCMOS process. This process flow integrates simultaneously the photodiodes, the CMOS and BJT transistors all...
To set up specification for 3D monolithic integration, for the first time, the thermal stability of state-of-the-art FDSOI (Fully Depleted SOI) transistors electrical performance is quantified. Post fabrication annealings are performed on FDSOI transistors to mimic the thermal budget associated to top layer processing. Degradation of the silicide for thermal treatments beyond 400°C is identified as...
Conference proceedings front matter may contain various advertisements, welcome messages, committee or program information, and other miscellaneous conference information. This may in some cases also include the cover art, table of contents, copyright statements, title-page or half title-pages, blank pages, venue maps or other general information relating to the conference that was part of the original...
In high-voltage integrated circuits operating at high temperatures, charge transport phenomena can occur in the encapsulation layer as a consequence of the electric field spreading out from the high-voltage bondpads/bondwires. In this work, the most relevant features of epoxy resins commonly used in the high-voltage packaging industry have been modelled and implemented in a commercial TCAD tool. Although...
In this paper we study the effect of random discrete dopants in the source/drain on the performance of a 6.6 nm channel length silicon FinFET. Due to the small dimensions of the FinFET, a quantum transport formalism based on the Non-equilibrium Greens Functions has been deployed. The transfer characteristics for several devices, which differ in location and number of dopants have been simulated. Our...
In this work, analytical stability equations are derived and combined with a physics-based model of an LDMOS transistor in order to identify the primary cause of failure in different operating and bias conditions. It is found that there is a gradual boundary between an electrical failure region at high drain voltage and a thermal failure region at high junction temperature. The theoretical results...
This work studies the electron mobility in InAs nanowires, taking into account the contribution of the main scattering mechanisms that determine its behavior. Moreover, we analyze its dependence on the nanowire diameter, carrier density and population of the Γ, L and X valleys. It is found that surface roughness and polar optical phonons are the scattering mechanisms that mainly limit the mobility...
The present paper focuses on the system-level optimization of GaN technology for high voltage applications. We will show that a key requirement for the future success of the GaN technology is the full system-optimization achieved by a simultaneous optimization of technology, packaging and applications. We will also show that Virtual Prototyping (VP) becomes, in GaN technology, a fundamental tool that...
Predictive TCAD tool is crucial for several reasons such as to provide pre-silicon data, shorten the technology development cycle and reduce the fabrication cost. In this paper, advanced 3D TCAD process and device simulations is used to gain physical understanding and to optimize the performance/variability of bulk-FinFETs. For the first time, the full FinFET process flow simulation was performed...
Fixed charge and surface traps at the passivation/semiconductor interface play a major role in both the on-state and off-state performance as well as reliability of AlGaN/GaN high-voltage transistors. This paper reports a comprehensive analysis of these fixed charges and donor traps using C(V) measurements of a Metal-Insulator-Semiconductor Field-Effect Transistor (MISFET) fabricated alongside a highvoltage...
Different AC pulsed stress signals have been applied to an n-type LDMOS with shallow-trench isolation (STI). The HCS degradation curves have been measured on wafer by varying frequency and duty-cycle under a high-VDS stress for both low and high Vgs biases. The linear drain current drifts have been also investigated through TCAD predictions under AC stress conditions for the first time. A quantitative...
The influence of the crystal orientation on the performance of silicon-based Graphene-Base Heterojunction Transistors (GBHTs) for terahertz operation is investigated by means of an in-house developed simulator based on quantum transport coupled with Poisson equation. The effect of impurity scattering is included, finding that terahertz operation is possible even considering the reduction of the mobility...
We propose a graphene transfer method based on chemical vapor deposited (CVD) graphene grown on copper foils. This transfer method utilizes a combination of a silicone elastomer (PDMS) and different intermediate polymer layers depending on the process requirements. We use polystyrene and polystyrene/photoresist intermediary layers for dry and wet graphene release. PMMA intermediary layer is applied...
The analysis of contact degradation in a not controlled atmosphere (air) at different temperatures in microstructures with electrostatic actuation is the main topic of this study. Different types of devices are subjected to 1 million impact cycles at three different temperatures (25 °C, 40 °C and 55 °C). The electrical properties are shown and the results are explained: a major operating temperature...
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