The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The temperature uniformity of thin film process is an important issue for susceptor in high temperature vacuum system. When the temperature of process is extremely high the uniformity is not only difficult to control, but also hard to maintain. In order to raise the temperature utilization at high temperature which is higher than 1300°C, the heating baffle is introduced for this purpose. As the result,...
Aluminium scandium nitride (Al1−xScxN) with its strongly enhanced piezoelectric response is the upcoming piezoelectric material of choice in next generation RF filters, sensors, actuators and energy harvesting devices. This paper will concentrate on the deposition technology for Al1−xScxN films with high Sc content. Films with Sc concentrations close to 43 at% have been grown on 200-mm substrates...
In this paper, different type of wax, wax content and hot hardness at 175°C on the release force and adhesion of molding compound were studied, The studies reveal that the hot hardness is playing a very important role to balance the conflict of reliability and moldability. With higher hot hardness of epoxy molding compound, the release force can be kept at same level with less wax content which can...
Silicon interposer and bridge is a multi-chip 3D technology that enables high density die-to-die interconnect on a package substrate. It opens a new era for heterogeneous on-package system integration. This paper presents an overview of this packaging architecture and its capabilities from concept to results. The overall components are introduced and discussed including constituent building blocks,...
Epoxy molding compound for LED bracket, with the merits of good resistance to heat and light damage as well as good reliability and warpage compared to traditional thermoplastic reflecting materials for LED bracket, such as Polyphthalamide (PPA) and Poly1,4-cyclohexylene dimethylene terephthalate (PCT), has becoming the focus of researchers. Here we studied the reflectance of the white epoxy molding...
This paper presents MEMS multi-sensors with low power tunable-gain interface circuit that can be monolithically integrated in the ASIC compatible standard CMOS process. A high gain ultra-low power sustaining TIA amplifier circuit with PLL compactly has been integrated with the resonator-based core sensing structure. The proposed low-power readout circuit adopts Correlated Double Sampling (CDS) to...
By changing curing accelerator and modifying the volume resistivity of epoxy molding compound (EMC), electrostatic characteristics of EMC applied package can be improved and electrostatic damage of IC device was reduced. EMC with phosphonium salt accelerator results in much lower ESD failure than EMC with phosphine salt accelerator. Because the volume resistivity of phosphonium salt applied EMC is...
Advanced Packaging relies heavily on the use of organic/polymer films and mold wafers such as Fan-Out Wafer-Level-Packages (FOWLP). Processing of such wafers poses challenges, potentially resulting in a high contact resistance (Rc), yield loss, increased maintenance costs and low tool productivity. In this paper we focus on novel approaches how to overcome these challenges. It is shown that the combination...
We will report our development results of phase-change and ferroelectric thin film processing technologies including sputtering, MOCVD and plasma etching as well as manufacturing processes for PCRAM, FRAM and MEMS/Sensor device applications. Thin-film functional material such as phase-change materials and ferroelectric materials have been utilized to form advanced semiconductor and electronic devices...
Graphene-based devices have attracted a lot of researchers' interests due to its excellent mechanical and electrical properties. However, graphene fabrication methods, such as CVD and mechanical exfoliation, have obvious drawbacks. Laser scribing technology is a novel method to fabricate graphene. In this paper, some electron devices based on laser scribed graphene, such as acoustic devices, strain...
The Root Mean Square current (Irms) has been explored on both N doped un-silicided poly and silicided poly at 40nm technology node. It is found that poly resistance-current (RI) curves show an initially high resistance due to Schottky Rectifying contact. However, poly Irms can be estimated similar to metal Irms. Parameters for poly Irms calculation is provided on the basis of 5°C Joule heating.
Low frequency noise behavior of 22 nm Si pMOSFETs featuring with filling W gate using different precursors, i.e., SiH4 or B2H6, have been studied. It is shown that carrier number and correlated mobility fluctuations are the underlying mechanisms for the flicker noise. Moreover, devices with B2H6 W processed gate metal were found to have a higher mean trap density and scattering coefficient than SiH...
For advanced interlayer dielectric (ILD) CMP slurry, it is highly desirable to achieve enhanced polishing efficiency and performance with reduced overall cost of ownership (CoO). A colloidal-silica based acidic ILD slurry,† was thus designed for accurate manipulation of the particle/wafer interaction by leveraging the use of proprietary additive. NMR studies were conducted to quantitatively understand...
Scaling down the complementary metal oxide semiconductor field effect transistors (COMS FET) requires involvement of High K (HK) metal gate technology in sub 45nm nodes. HK enables significant lower leakage at similar effective oxide thickness (EOT) to SiO2 by effective suppression of direct tunneling. However, stress induced leakage current (SILC) and defects in the ultrathin interlayer in HK stack...
This paper describes the improvement obtained when using an Applied Materials Mirra CMP system equipped with 150mm Titan Profiler or 200mm Titan Contour wafer-carrier heads, versus a polisher with a basic carrier. The wafer-edge profiles and polish-rate stability were compared between the polishers using different wafer-carrier heads. The polisher usage/capacity and CMP cycle time in production were...
Development of low temperature wafer level hybrid bonding process using Cu/SnAg bump and photosensitive adhesive was reported. Two kinds of photosensitive adhesives, i.e., polyimide and dry film, were selected for adhesive bonding. The proposed hybrid bonding method has been successfully applied to 8 inch wafer to wafer bonding. Hybrid bonding using both polyimide and dry film achieved seam-free bonding...
The formation mechanism of Cu-Al IMC is critical to control the contact quality of interconnections between Al bond pads and Cu wires. The in-situ TEM is a powerful tool to analyze the phase evolution and defects formation of IMC in real time. TEM images reveals that the amount of IMC increases with raising of annealing temperature and duration of time. Energy dispersive spectrometer (EDX) and high...
Multiple Vt tuning is necessary for SOC (system-on-a-chip) FinFET devices at 16nm technology node and beyond. To achieve this, BARC open, as a mask, for NMOS/PMOS implantation process is needed. Vertical profile with enough PR effective height is the key challenge of this process. Besides, WPH for run cost reduction is another major consideration from customer perspective. So gas N2/NH3 chemistry...
As the NAND Flash dimension scales down, many scaling problems were caused, such as the poly damage issue during cell STI recess process and SiN remove process. The problems include the cell poly loss uniformity due to the smaller CD and Peri area poly damage issue after cell SiN remove process. Further scaling down beyond 2× generation, it is also facing new scaling limitations, more severe CG (control...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.