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The field of computational electronics began in a serious way when the so-called semiconductor equations were numerically solved in one, two, and three dimensions. The result was a new tool in the device engineer's toolkit, and the impact was profound. Much of the subsequent history of the field has consisted of working to improve the description of carrier transport as provided by the drift-diffusion...
We estimate the SERs of 65-nm SOTB(Silicon on Thin BOX) and 28-nm UTBB(Ultra Thin Body and BOX) FD-SOI processes by decreasing the supply voltage. Alpha, neutron irradiation experiments and Monte-Carlo based simulations are compared in this work. The SERs can be analyzed by the simulation tool with only layout pattern of test chips. The simulation results are consistent with the alpha and neutron...
This paper reviews the main challenges for the TCAD of 14nm Fully-Depleted Silicon-On-Insulator (FDSOI) technology performance assessment. Thanks to a multi-scale approach combining extensive electrical characterization and advanced solvers simulations, ensuring deep physical insight, we provide TCAD simulation framework for device layout optimization, strain engineering and device reliability assessment.
Having access to time-resolved quantum transport data is beneficial for more accurate calculation of energy/delay device characteristics during turn on, for studying novel effects based on the wave function phase manipulation, and as an alternative research path to simulating dissipation and nonlocal scattering in real time. We present a time-resolved version of the quantum transmitting boundary method...
This paper presents a new methodology for multiscale strain simulations of semiconductor devices based on the valence force field (VFF) method and the finite element method (FEM). By coupling the atomistic and the continuum methods, only advantages such as the atomistic description and accuracy of the VFF method and the flexibility and numerical efficiency of the FEM can be obtained.
We present SplitSolve, a novel sparse solver dedicated to linear systems in ballistic quantum transport calculations. The proposed algorithm specifically addresses the need for higher performance in the innermost loop of the energy integration in ab-initio simulations on hybrid architectures. The computation of the open boundary condition is deserialized from the most time consuming preprocessing...
We present fully self-consistent small signal and microscopic noise simulations of a nanoscale double-gate nMOSFET by a semi-classical and deterministic approach. We show how such a system of Poisson, Schrödinger and Boltzmann equations can be used to self-consistently determine several key quantities relevant to circuit designers.
The contact regions in nanoscaled transistors play an increasingly important role in the overall performance of the devices. An electrostatic lens in the source contact region to focus a beam of electron wave packets into a nanoscaled channel is investigated here, using a Wigner Ensemble Monte Carlo simulator. An improvement in the drive-current is achieved by reducing reflections from the surrounding...
This paper presents a modeling study of III-As materials' band structure obtained with a full-zone 54-band k· p model. This model, extending the 30-band model of Refs. [1], [2], accounts for (220) bands and allows a better description of the band structure in the vicinity of the K point [2]. The band gaps and effective masses derived from the band structure are compared with values obtained from other...
We present calculations of the phonon-limited mobility in intrinsic n-type monolayer graphene, silicene and MoS2. The material properties, including the electron-phonon interaction, are calculated from first principles. Unlike graphene, the carriers in silicene show strong interaction with the out-of-plane modes. However, we find that graphene only has a slightly higher mobility compared to silicene...
With the increased focus on III–V materials as potential candidates for next-generation nanotransistors advanced bandstructure models going beyond the parabolic band approximation are required to ensure accurate device simulations. For that purpose we present in this paper a quantum transport approach that relies on the effective mass approximation extended with a non-parabolic (NP) correction of...
We use density-functional-based tight binding theory, coupled to a Poisson solver to investigate the dielectric response in oxidized ultra-thin Si films with thickness in the range of 0.8 to 10.0 nm. Building on our recent work on the electronic structure of such Si films using the same formalism, we demonstrate that the electronic contribution to the permittivity of Si and of SiO2 is modeled with...
Hole trapping in the gate insulator of pMOS transistors has been linked to a wide range of detrimental phenomena, including random telegraph noise (RTN), 1/ f noise, negative bias temperature instability (NBTI), stress-induced leakage currents (SILC) and hot-carrier degradation. Recently we were able to show that the hydrogen bridge (HB) and hydroxyl E′ centers (H-E′centers) are likely candidates...
A plausible Density Functional Theory (DFT)-based Oxygen Vacancy (OV) hole trap activation model was recently proposed to explain the High Temperature-Gate Bias (HTGB) stress-induced additional threshold voltage instability in 4H-Silicon Carbide (4H-SiC) power MOSFETs. In this model, certain originally electrically ‘inactive’ OVs were shown to structurally transform over time to form switching oxide...
We describe the transport characteristics of a 50 nm (gate length) 2D InAs tunnel field-effect n-i-n transistor in a double-gate fin-like geometry (fin width 2.3 nm) by means of atomic-scale simulations. In particular, we compare results from density functional theory (DFT) using the Meta-GGA exchange correlation potential with those from a tight-binding Hamiltonian. For the first time we show that...
Using advanced parameter-free first-principles calculations, we suggested that corundum (a-Al2O3) is a promising candidate of the dielectric materials for monolayer black-phosphorus (BP). Hydrogen passivated Al2O3 is preferred to avoid metallization with monolayer BP. Clean interface is found between monolayer BP and H-terminated Al2O3. The valence-band offset for these systems is around 0.9eV, which...
We model hot-carrier degradation (HCD) in n- and p-channel LDMOS transistors using an analytic approximation of the carrier energy distribution function (DF). Carrier transport, which is an essential ingredient of our HCD model, is described using the drift-diffusion (DD) method. The analytical DF is used to evaluate the bond-breakage rates. As a reference, we also obtain the DF from the solution...
Impacts of the 4H-SiC/SiO2 interface states on the switching operation of power MOSFETs are evaluated. The energy distributions of the interface states are characterized using measured C-V curves of the MOS capacitors with the aid of TCAD simulation. The effect of nitrogen incorporation into the SiC/SiO2 interface via post-oxidation anneal (POA) on reducing the interface states is confirmed by the...
In this work, an efficient method is applied to calculate the miniband structure and density of states for well-ordered Ge/Si quantum dot (QD) array fabricated by combining the self-assemble bio-template and damage-free neutral beam etching. Within the envelop-function framework, this computational model surmounts theoretical approximations of the multi-dimensional Kronig-Penney method and the numerical...
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