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Pattern-dependent non-uniformities were studied in this work focusing on a depth loading effect in 28 nm node STI. Both positive and negative depth loadings, which mean the trench depth difference between isolated and dense structures, were observed depending on selected gas chemistry. It has been shown that by utilizing a Cl2/O2/N2 plasma for Si patterning, a negative depth loading was more attributive:...
Short length effect on Electromigration (EM) of 40nm Low-k Cu interconnects was investigated through downstream structure and via chain. It is found that EM middle time-to-failure (MTTF) of short length metal can be enhanced at least 20 times. It is also observed that EM performance of short metal length degrades much slower, which can be applied to improve interconnect EM performance through via...
Automotive IC demand is expected to grow tremendously at CAGR of ∼ 7% over the next few years. In general automotive devices can be packaged into commonly used packaging solution like SOIC, SOP, QFN, except a few automotive products may require custom packaging solution. This paper discuss the QFN packaging solution for automotive IC from the perspective of package outline design, material selection,...
The plasma resistant materials, such as yttrium oxide (Y2O3), are synthesized as a coating to protect the surface of the key components, such as showerhead (SH), for the plasma etching chamber. When the F contained plasma is used in the etching process, the inorganic fluoride, such as YF3 deposition, is usually formed over Y2O3 coating on the SH surface and may induce the particle while the thickness...
Graphene foam (GF), carbon fibers (CFs) and GF/CFs reinforced epoxy resin composites were fabricated and their thermal properties were investigated. Due to continuous interconnected structures of GF and avoiding the CFs aggregation in epoxy resin, GF/CFs reinforced epoxy resin demonstrates greatly higher thermal conductivity than the single GF or CFs reinforced epoxy, which could provide a strong...
In order to extract the electrical characteristics of Through-Silicon-Via (TSV) accurately, the methodologies are proposed based on three-dimensional (3D) full-wave simulations, which include both DC and high frequency measurement structures. The DC measurement uses Kelvin structure and the sources of error are discussed. The high frequency measurement structures are designed based on GSG format microwave...
Reducing leakage current and improving device's stability become important challenge for CMOS develop under the technology node of 22nm. FinFET has been attractive as the most potential device structure under 22nm. Unique FinFET device structure has the absolute advantage in restraining short channel effect. This paper presents an optical metrology technique OCD for FinFET dimension measurement. This...
Integrated passive technologies are becoming more important for both mixed signal mode as well as the key building blocks in RF products. The passive components such as capacitors drive a higher degree quality for different process schemes. We summarize the different approaches to achieve the high reliability metal-insulator-metal (MIM) capacitors. The continuous improvements of the MIM capacitor...
Now an accurate metrology of Silicon-Germanium (SiGe) thickness and Ge concentration is becoming more and more important for beyond 40nm technology. Traditional solution is normally Transmission Electron Microscope (TEM) for thickness and Second Ion Mass Spectrometry (SIMS) for Ge concentration, which is suffering from sample destruction and makes inline monitoring impossible. On the contrary, optical...
The growth rate of epitaxy depends primarily on parameters such as source gas deposition temperature pressure and concentration. Most microelectronic circuits fabrication that use epitaxial wafers require a lightly epitaxial layer (1014–1017 atom/cm3) on a heavily doped substrate (1019–1021 atom/cm3). The distribution of vacancies and interstitials is important for the distribution of the high surface...
In this paper, we focus on the influence of series resistance of signal line (comoprised of the sheet resistance of graphene and the contact resistance between graphene and metal) on the radio-frequency transmission property of graphene coplanar waveguide (CPW) and put forward ways to improve it. According to our research, the large series resistance (7.2 kΩ) of signal line is the main reason for...
This paper reviews methods for reducing process exhaust pipe hazards in high-volume manufacturing. Process dry-pumps and point-of-use abatement systems can be integrated with essential safety devices and monitoring systems into a complete sub-fab vacuum and abatement solution. Such integrated sub-fab systems ensure safe exhaust pipe operation and reduce exposure of service staff to hazardous materials...
Electrically active defects in silicon-based epitaxial layers on silicon substrates have been studied by Deep-Level Transient Spectroscopy (DLTS). Several aspects have been investigated, like, the impact of the pre-epi cleaning conditions and the effect of a post-deposition anneal on the deep-level properties. It is shown that the pre-cleaning thermal budget has a strong influence on the defects at...
The FinFET technology is continuously progressing toward 14nm node on SOI and bulk substrate with good compatibility with planar CMOS and driving CMOS scaling and Moore's law for low-power/SOC and future Internet-of-Things (IOT) applications. The challenges of new FinFET technology in manufacturing at 14nm and beyond is reviewed.
Anhydride and amine epoxy systems are widely used as hardeners in underfill materials for flip chip packaging. A comparison was made between these two systems in order to evaluate the comprehensive performance of the resulting underfill. It was found that the addition of multi-size silica particles has little effect on the curing reaction of the epoxy mixture while a significant effect on increasing...
FinFET technology has been chosen for extending CMOS scaling beyond 28nm node. It can improve short channel control through a fully depleted fin, reduce random dopant fluctuation, improve mobility, lower parasitic junction capacitance and improve area efficiency. The non-SAC (self-aligned contact) local interconnection is introduced for the device connection. As the pitch shrinkage beyond immersion...
With gradually adopted silver alloy wire bonding in IC and LED Packaging, BSOB becomes a common practice for die stacking in IC packaging and Multi-die Serial Bonding in LED, BBOS is adopted only in LED field. This paper identify a kind of texture of silver alloy bonding wire via Electron Backscatter Diffraction (EBSD) analysis for more consistent BSOB/BBOS bonding with lower MTBA (Mean Time Between...
In the 55nm technology node and beyond of integrated circuits, tungsten is used in contact layer interconnection. Before tungsten deposition, a contact glue layer consist of titanium and titanium nitride (Ti/TiN) is used to enhance adhesion, reduce resistance and prevent tungsten diffusion into the substrate. The growth condition of contact glue layer(s) determines the characteristic of gap fill tungstenfilm,...
In this paper, the stretchable conductors were fabricated by in-situ polymerization of 3,4-ethylenedioxythiophene (EDOT) on polyurethane sponges (PUS). The mechanical property, electrical conductivity, resistance variation and cycling stability of poly(3,4-ethylenedioxythiophene) (PEDOT) based PUS (PUS-PEDOT) stretchable conductors were investigated. It was found that the stretchable conductors can...
For high demand of large bump density, fine pitch micro Cu bumps are usually connected to trace on the substrate by flip chip technology. In this study, TCNCP (Thermal Compression Bonding with Non-Conductive Paste) method was used to attach die Cu pillar onto substrate trace with surface finish of thin Ni and thick Au in a flip chip package. The micro Cu bump used in the device under test had a dome...
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