The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
I will give an overview of our recent work on the integration of III-V semiconductor nano-structures on silicon (Si) for electronic devices. The template-assisted selective epitaxy (TASE) used to monolithically integrate high crystal quality III-V nanostructures on Si is introduced. The challenges and recent progress of the development of nanoscale III-V MOSFETs and Tunnel FETs is discussed and a...
A thorough understanding on how to design and to manufacture a face-tunneling TFET (f-TFET) has been provided. By taking advantage of an area-tunneling, in comparison to conventional point-tunneling FET, f-TFET can be enhanced in its current. This work shows I0„ of f-TFET with one-order magnitude I„n enhancement than that of point-TFET(control), and the longer the gate length is, the higher the becomes...
We report for ultra-thin Si tunnelling diodes that negative differential conductance (NDC) is dominated by the excess current at room temperature. This is attributed to the gap-states induced by the co-dopants in the pn junction. First-principles simulation shows that the presence of co-dopants in the pn junction region leads to an increase in the interband tunnelling current by two orders of magnitude...
This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of Ion, gm, and overdrive are analyzed and explained by most effective reduction of body factor, m < 1, especially for Vg>Vt, which greatly amplify the control on the surface...
Aiming at performance enhancements and robust reliability design of mono-layer transition-metal dichalcogenide (TMD) tunneling FET(TFET), W vacancy(Vw) defect is systematically studied in this work. Impacts of Vw defect's positions are characterized in WSe2 TTETs by using rigorous ab initio simulations. It is found that Vw defect that locates in the tunnel junction will increase Ion, while it has...
A high peak hole mobility of 412 cm2/V-sec at Ninv=1.8×1012 cm−2, a very low Jg of ∼10−4 A/cm2 at Vg=Vfb+1 V and an ultralow EOT of 0.53 nm in Ge pMOSFETs are simultaneously achieved by high-k/0D-HKVGe02 gate stack with suitable treatments. The content of Ge+1 and Ge+2 in GeOx layer are re-oxidized to higher oxidation state by gettered oxygen, which is captured by OD-HfOx from GeOx. The proposed gate...
In this paper, a new modeling approach for understanding and designing a recently proposed steep subthreshold slope SOI transistor (i.e. PN-Body Tied SOI FET [1-3]) is proposed. We revealed that the abrupt switching operation can be modeled using a simple equivalent circuit comprising two cross-coupled voltage inverters (i.e. electron current and hole current inverters). The model will be useful for...
We have investigated dynamic characteristics of ferroelectric Hf02 (FE-HfÓ2) by considering multiple domain (MD) and linear domain-domain interaction. By using the calibrated MD model, experimental dynamic responses of FE-HfO2 can precisely reproduced, for the first time. Input voltage amplitude (Vin) and external resistance (R) dependences of dynamic responses in FE-HfO2 revealed that dynamic term...
We have investigated dynamic characteristics of ferroelectric Hf02 (FE-Hf02) by considering multiple domain (MD) and linear domain-domain interaction. By using the calibrated MD model, experimental dynamic responses of FE-HfO2 can precisely reproduced, for the first time. Input voltage amplitude (Vin) and external resistance (R) dependences of dynamic responses in FE-Hfö2 revealed that dynamic term...
In this work, we have investigated the effect of thin SiO2 layer on switching variability of SiNx-based RRAM. We found that recessive LRS state generated in set operation results in large reset current and abrupt reset operation. The abrupt reset operation leads to large HRS distribution. To investigate the transient characteristics of switching process in detail, measurement environment is implemented...
Scaling of silicon MOSFETs has been predicted to go around 10 nm and below. For such a small transistor a gate-all-around nanowire is regarded as an ideal geometry to maintain gate control. On the other hand, such downsizing and excellent gate control has provided opportunities to control individual electrons one by one by placing gates on top of the nanowire to define charge islands and potential...
We demonstrate the single-shot spin read-out of single donors and few-donor clusters, positioned with atomic precision by scanning tunneling microscopy (STM) in atomically engineered silicon devices [1-3]. In donor clusters, we measure spin lifetimes of up to half a minute, recorded at a read-out fidelity of up to 99.8% [2]. Importantly, measuring spin relaxations rates of electrons bound to a single...
We have recently reported single-electron tunneling (SET) via a-few-donor QDs at high temperatures in high-concentration selectively-doped SOI-FETs. A central QD works by SET mechanism above 150 Κ at small source-drain bias due to enhanced tunnel barrier. For tuning the tunnel barrier, it becomes critical to understand the impact of the donor-QD location on the SET transport. Here, we report the possibility...
Inter-band tunneling in Si is a key mechanism for Esaki diodes and tunnel FETs. In nanoscale devices, the dopant states under high built-in electric field may significantly affect inter-band tunneling transport. Here, we introduce firsttime observations from measurements of nanoscale Si tunnel diodes of two main effects: (i) splitting of dopant minibands in high electric field, similarly to the Wannier-Stark...
Impact ionization [1,2], or electron-hole pair creation by charged particles, has been one of the central issues of semiconductor physics and devices. However, due to its complexity of the process, most experimental studies and their analyses have been macroscopic and phenomenological. This situation prevents us from exploring the fundamental physics of impact ionization and of high-energy charged...
This work investigates the impact of fin-LER on the subthreshold characteristics of the negative-capacitance FinFETs by TCAD atomistic simulation coupled with the Landau-Khalatnikov equation. Our study indicates that the variability for Vt, SS and DIBL can be suppressed by the negative-capacitance feedback mechanism. The ferroelectric layer exhibits larger gate voltage amplification for the device...
The polycrystalline silicon (poly-Si) gate-all-around (GAA) nanowire transistors with 10nm scale width were fabricated under precise width control. The nanowire width is 10nm scale. Measured characteristics show smaller threshold voltage and drain current variability than that of previously reported poly-Si nanowire transistors.
The quasi-ballistic hole transport capabilities of Ge and Si NWs were calculated using atomistic electron-phonon coupling and Boltzmann transport equation. Analyzing the forward and backward current fluxes, it was shown that the positive impact of high mobility of Ge is canceled by its slower energy relaxation, which results in comparable transmission coefficients and current transport capabilities...
In this work, the impacts of both nanowire diameter (Dnw) and Ge content (%) on the performance of Si1−xGex Gate-All-Around nanowire p-channel FETs (GAA pNWTs) are investigated. The variations in SiGe GAA pNWTs induced by Dnw variation, Ge content variation and some stochastic process variations including of random dopants fluctuation (RDF), gate edge roughness (GER), and metal gate granularity (MGG)...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.