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The spin transfer torque magnetic random access (STT-MRAM) is suitable for embedded memories and also for the second level cache memory in the mobile CPU's. The most capable NVM component is STT-MRAM, which enhances the performance by 3.3 nS access time. It has strong radiation hardness, higher integrity and maximum endurance compared to SRAM. The power consumption of STT-MRAM is decreased by an order...
The spin transfer torque magnetic random access (STT-MRAM) is suitable for embedded memories and also for the second level cache memory in the mobile CPU's. The most capable Nonvolatile memory (NVM) component is STT-MRAM. There is a demand to improve efficient circuit and architecture to compete with the existing NVM technologies. Low energy consumption is achieved to write and read into MTJ. This...
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