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The spin transfer torque magnetic random access (STT-MRAM) is suitable for embedded memories and also for the second level cache memory in the mobile CPU's. The most capable NVM component is STT-MRAM, which enhances the performance by 3.3 nS access time. It has strong radiation hardness, higher integrity and maximum endurance compared to SRAM. The power consumption of STT-MRAM is decreased by an order...
The spin transfer torque magnetic random access (STT-MRAM) is suitable for embedded memories and also for the second level cache memory in the mobile CPU's. The most capable Nonvolatile memory (NVM) component is STT-MRAM. There is a demand to improve efficient circuit and architecture to compete with the existing NVM technologies. Low energy consumption is achieved to write and read into MTJ. This...
High performance biofunctionalized field effect transistors (BioFETs) use nanoscale electronic materials such as silicon nanowires (SiNWs), carbon nanotubes (CNT) and graphene for the sensing application. Specific focus will be on high-performance, low-cost, scalable, and reliable biofunctionalized field effect transistor (BioFET) based on graphene. We attempted to build the graphene based sensing...
In 3D IC technology, Through Silicon Via (TSV) is the primary medium used to distribute power and signal between layers of chips. Placement of a large number of TSVs in close vicinity leads to performance degradation due to interferences and crosstalk. The core of a TSV is usually circular column shape. In this paper, different shape for the core of the TSV is investigated to find the best possible...
While traditional transistor scaling in integrated circuit industry is going on one side, interconnect scaling has become the performance-limiting factor for new designs on the other side. The increasing influence of interconnect parasites on crosstalk noise and RLC delay as well as electro-migration and power dissipation concerns have stimulated the introduction of low-resistivity copper and low-permittivity...
Flash memory experiences adverse effects due to radiation. These effects can be raised in terms of doping, feature size, supply voltages, layout, shielding. The the operating point shift of the device forced to enter the logically-undefined region and cause upset and data errors under radiation exposure. In this letter, the threshold voltage shift of the floating gate transistor (FGT) is analyzed...
Through silicon via (TSV) is one of the key components of the emerging 3D ICs. However, increasing number of TSVs in smaller silicon area leads to some severe negative impacts on the performance of the 3D IC. Growing signal integrity issues in TSVs is one of the major challenges of 3D integration. In this paper, different materials for the cores of the vias and the interposers are investigated to...
Flash memory based on floating gate transistor is the most widely used memory technology in modern microelectronic applications. We recently proposed a new concept of multilayer graphene nanoribbon (MLGNR) and carbon nanotube (CNT) based floating gate transistor design for future nanoscale flash memory technology. In this paper, we analyze the programming and erasing by the tunneling current mechanism...
For flash memory devices the thicknesses of the control and tunneling oxides in the floating gate transistor (FGT) are crtical parameters. We recently proposed a floating gate transstor using multilayer graphene nanoribbon (MLGNR) and carbon nanotube (CNT). In this paper, we have analyzed the impacts of scaling the thickness of the control and tunneling oxides in the proposed MLGNR/CNT based FGT....
Floating gate transistor is the basic building block of nonvolatile flash memory, which is one of the most widely used memory gadgets in modern micro and nano electronic applications. As silicon based integrated circuit technologies are approaching the limits of scaling, carbon based nanoelectronic devices are emerging as the future platform for low power, low cost, high performance and environment...
Heat transfer and consistent power delivery are the two most critical issues in 3D stacked IC technology. In order to ensure consistent and reliable power delivery to all the components of the 3D stacked IC while suppressing the power supply noise to a minimum level, a highly efficient power distribution network is essential. But complex thermal and power networks weaken signal integrity in 3D IC...
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