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Negative capacitance ferroelectric (FE) field-effect transistor (FeFET) is promising to address the issue of the increasing power density in digital circuit by realizing sub-60 mV/decade subthreshold swing. This inspires us to evaluate its applications in analog circuit. In this paper, the evaluation is performed based on the equivalent circuit model and through device- and circuit-level benchmarking...
The world's first GeSn p-FinFETs formed on a novel GeSn-on-insulator (GeSnOI) substrate is reported, with channel lengths Lch down to 50 nm and fin width WFin down to 20 nm. In comparison with other reported GeSn p-FETs, record low S of 79 mV/decade, record high Gm, int, of 807 μS/um (VDs of −0.5 V), and the highest Gm, int/Ssat, were achieved. The highest high-field hole mobility of 208 cm2/Vs (at...
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