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Broadband impedance matching for band-pass RF power amplifiers targeting Software Defined Radios (SDR) is reviewed with emphasis on the power supply voltage and how higher voltage operation could improve power versus bandwidth. Measured data on a 100 watts CW GaN amplifier operating at 100 V over the 500 MHz–2 GHz frequency band are shown to support the analysis. Results show that amplifier operation...
In this paper, we present a measurement setup for characterizing high-voltage high-power microwave transistors in terms of their reliability under actual operating conditions. By operating in the megahertz range, one exploits important advantages as the use of low-cost instrumentation and the possibility of handling high voltages and high powers. Finally, the gathered data, which are consistent with...
In this paper an automated measurement system for the investigation of degradation phenomena in GaN FETs is presented. The system is able to perform both static and dynamic stress cycles under actual device operation, gathering useful information strictly related to the “health” of the device. As case study a 75-VDC GaN HEMT was used for a 19-hours stress test, putting in evidence how the device performance...
A 2-stage 40 dB gain 1 kilowatt transmitter pallet for remote sensing synthetic aperture radar (SAR) applications in P-band from 420 to 450 MHz is presented. The unique feature of this paper is the use of GaN transistors operating from a 75 V drain bias. All commercially-available GaN transistors operate from 60 V or less drain supply, but using 75 V increases the load impedance at the fundamental...
A novel solid-state power amplifier technology for RF power sources used in various industrial, scientific and medical (ISM) applications is presented. The prototype devices reported for this paper achieve 200 W CW saturated output power with 80% drain efficiency at 430 MHz and 110 W at 915 MHz. Unlike ubiquitous 50 V solid-state transistor technology, the data we present explore 75 V and 100 V bias...
This paper analyzes the requirements for solid-state devices to replace vacuum tubes in radar systems and introduces a 700 W GaN transistor operating at 150 V at UHF frequencies with 80% drain efficiency. The signal during the RF tests employed 52 μs and 100 μs pulse width with a duty cycle ranging from 2% to 5% and 10% at a frequency of 430 MHz. Although the prototype transistor presented in this...
A 1 kilowatt pulsed RF amplifier operating at 150 V for radar applications in the UHF frequency band from 420 MHz to 450 MHz is presented. GaN HEMT devices with 600 V breakdown voltage are becoming ubiquitous in power conversion applications operating from kHz to a few MHz, but they have never been considered for RF applications in power amplifiers. This paper explores the advantages in high power...
UHF-band long-pulse radar BJT power amplifiers using push-pull and balanced configurations are presented. The NPN BJTs are fabricated in a state-of-the-art 6" silicon wafer fab at Integra Technologies Inc. The BJTs are internally matched and mounted on BeO package. To handle low frequency oscillations, band-rejection filter type bias circuit and negative feedback are employed. Common base configuration...
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