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SiC devices are expected to be used in high voltage fields that require a breakdown voltage from 3 to 10kV such as railways, as well as the automotive that require high reliability such as hybrid vehicles and electric vehicles. This paper presents the packaging technologies of enhanced breakdown voltage for All-SiC modules.
We developed the All-SiC power module for photovoltaic Power Conditioner System (PCS). The All-SiC module has SiC-MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and SiC-SBD (Schottky Barrier Diode) which are sandwiched between SiN (Silicon Nitride) substrate and power circuit board. Thick copper block which is attached SiN substrate enhances low thermal resistance and Cu pin which is connected...
This paper describes advanced power module structure for high power and high frequency application with solar inverter system. This advanced power modules is applied full SiC semiconductor which has SiC MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and SiC SBD (Schottky Barrier Diode). This full SiC power module structure realizes high reliability with low thermal impedance by using these...
A newly developed module with wirebond-less structure is investigated. This structure has multi-pin attached interconnection structure implanted into power circuit board with connecting line between chips and other elements inside the power module. Additionally, heat-spreader-like copper blocks bonded to ceramic insulated substrates performing high thermal conductivity, enable to realize high current...
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