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We developed 3.3kV All-SiC power module on which SiC-MOSFET and SiC-SBD were mounted for electric power distribution apparatus. This power module has characteristic structure of pin-connections and resin-molded. Total switching loss of the module is lower than the module which mounted Si-IGBT and Si-FWD more than 60 percent.
SiC devices are expected to be used in high voltage fields that require a breakdown voltage from 3 to 10kV such as railways, as well as the automotive that require high reliability such as hybrid vehicles and electric vehicles. This paper presents the packaging technologies of enhanced breakdown voltage for All-SiC modules.
The next-generation power module is expected to be used in high voltage applications. The key issue in high-voltage power module is the existence of partial discharge (PD). Therefore identifying a PD location leads to a higher voltage operation of power module. PD location could be made by measuring acoustic wave detected by acoustic emission sensors. This paper deals with propagation characteristics...
Existence of partial discharge (PD) is one of the key issues in high-voltage power module. Thus, identifying a PD location in a power module leads to a higher voltage operation of a power module. An attempt is made to identify PD location in an IGBT power module by measuring electromagnetic wave (EMW) detected by multiple loop sensors. In this paper, a novel technique for identification of PD source...
This paper deals with partial discharge (PD) properties of 0.32 mm thick Si3N4 insulation substrate molded with epoxy resin after long term voltage application. Copper sheet electrode is attached on both sides of the ceramic substrate, which is used for insulation and heat dissipation in a power module. Two kinds of specimens are prepared having different partial discharge inception voltage (PDIV),...
This paper deals with partial discharge (PD) location in a power module by measuring electromagnetic (EM) wave of PD using four loop sensors. As the distance between the sensor and PD source decreases, the peak to peak magnitude of the first wave of detected EM wave was found to increase using four sensors array. An attempt is made to locate PD source using output electromagnetic waves detected four...
We developed the All-SiC power module for photovoltaic Power Conditioner System (PCS). The All-SiC module has SiC-MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and SiC-SBD (Schottky Barrier Diode) which are sandwiched between SiN (Silicon Nitride) substrate and power circuit board. Thick copper block which is attached SiN substrate enhances low thermal resistance and Cu pin which is connected...
The surface barrier effect due to nickel (Ni) film on aluminum (Al) surface electrode of insulated gate bipolar transistor (IGBT) via power cycling (P/C) test at the maximal junction temperature (Tjmax) of 200 °C and thermal cycling (T/C) test in the −55 °C to 200 °C range has been carefully investigated. The difference of coefficient of thermal expansion (CTE) between Al and Ni and the stiffness...
We developed the direct-liquid-cooling IGBT module which enabled downsizing of a power control unit for HEV system and high reliability simultaneously. This module eliminates thermal grease by unifying a ceramic substrate and a heat sink. It contributes this module realized the reduction of thermal resistance 30 % compared to the conventional indirect liquid cooling type. High thermal conductive Si...
This paper describes advanced power module structure for high power and high frequency application with solar inverter system. This advanced power modules is applied full SiC semiconductor which has SiC MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and SiC SBD (Schottky Barrier Diode). This full SiC power module structure realizes high reliability with low thermal impedance by using these...
Power Electronics Equipments applying superior characteristics Silicon Carbide (SiC) power semiconductors have been researching and developing. Applying the hybrid modules using Si-IGBT and SiC-SBD (Schottky Barrier Diode) to the motor drive inverter enables reduction of the loss 25% of the inverter part. Moreover applying the All-SiC modules using SiC-MOSFET and SiC-SBD to the solar inverter enables...
Power Electronics Equipments applying superior characteristics Silicon Carbide (SiC) power semiconductors have been researching and developing. Applying the hybrid modules using Si-IGBT and SiC-SBD (Schottky Barrier Diode) to the motor drive inverter enables reduction of the loss 25% of the inverter part. Moreover applying the All-SiC modules using SiC-MOSFET and SiC-SBD to the solar inverter enables...
Aluminium wirebond-less power module structure was investigated and presented in ISPSD 2011 [1]. The features of this structure are high-density packaging with Copper pins connection and power circuit board, low thermal resistance with thick Copper block on Silicon Nitride ceramic substrate and high reliability with epoxy resin moulding. This paper introduces Silicon Carbide MOSFET power module with...
A newly developed module with wirebond-less structure is investigated. This structure has multi-pin attached interconnection structure implanted into power circuit board with connecting line between chips and other elements inside the power module. Additionally, heat-spreader-like copper blocks bonded to ceramic insulated substrates performing high thermal conductivity, enable to realize high current...
A newly developed structure package has been investigated. It has new features, multi-pin attached interconnections and epoxy encapsulation. The pin interconnection provide large current capability for the power module. Due to the epoxy encapsulation, FEA and power-cycling test proved their superior characteristics of reliability. It has a both features for high-density packaging and high reliability,...
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