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Enhanced electroluminescence in arrays of double metal patch microcavities is demonstrated. The enhancement originates from high Purcell factors and efficient photon out-coupling as the period of the array is increased.
We measure the opto-electronic properties of femtosecond-laser-ablated GaAs and demonstrate its utility towards THz devices. In particular, we show that laser-ablated THz antennas are 65% more efficient than non-ablated antennas at high powers. Our results demonstrate the possibility of using femtosecond-laser-ablation as a cost-effective technique to engineer material properties for THz devices.
We study the generation of broadband THz radiation (∼18 THz) with high peak electric field (∼0.5 kV/cm) using a low temperature GaAs interdigitated photoconductive antenna and a high-power, high repetition rate, 15 femtosecond Ti:Sapphire oscillator.
Visible pump-probe spectroscopy isolates the femtosecond Drude response of a photogenerated electron-hole plasma in monolayer graphene. The observed Vn scaling versus carrier density reveals the relativistic nature of the electron-hole plasma.
We report a novel ultrafast optical system capable of directly pumping low energy excitations in complex materials and probing the photoinduced changes in their properties with terahertz pulses, benchmarked through mid-infrared-pump, THz-probe measurements on InSb.
We report on ultrafast photoenhanced ferromagnetism and para- to ferromagnetic phase transition, on a 100-ps time scale, due to a transient enhancement of Curie temperature Tc via the population of photoexcited carriers in III-Mn-V semiconductor GaMnAs.
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