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In this work, the high frequency (RF) performance of FinFETs is investigated in detail using a two-level parasitic model comprising outer and inner parasitic capacitances in addition to parasitic series resistances. Use of scaling relations of these parasitic capacitances with numbers of fins and fingers allows extraction of these elements. Next, by defining a series of reference surfaces, each associated...
The high frequency thermal noise sets the lower limit of the detectable signals in the receiver RF front-end systems.Hence it is very important that the models for thermal noise should be more accurate and physical. In this paper, we model thermal noise with BSIMSOI and PSPSOI models and compare it with the hardware data. The comparison is done for two types of FET:thick gate-oxide NFET (5.2 nm) and...
We fabricate devices and circuit blocks using a novel, fully-printed transistor process that self-aligns source/drain electrodes to gates, resulting in improved overlap capacitance. These are used with a self-aligned interconnect to realize fully-printed transistor arrays and inverters showing performance suitable for use in a range of low-cost electronics applications.
The lack of self-alignment between the gate and the source/drain electrodes is significant problem for printed transistors, since alignment is typically limited by the layer-to-layer registration capabilities of the printer. This in turn necessitates the use of design rules specifying large gate-to-source/drain overlaps, resulting in degraded switching speed due to the large overall capacitance [1]...
Despite their excellent control of short channel effects, FinFETs suffer from different trade-offs in the mixed-signal domain, with respect to planar devices. For the first time, we report a complete and comprehensive comparative analysis showing that these trade-offs can be alleviated in advanced FinFET technology. As such, higher voltage gain and transconductance than planar MOSFETs are reached...
New process modules and device architectures for (sub-) 32 nm CMOS lead to both opportunities and challenges for analog/RF and mm-wave circuit design. A survey will be given describing the advanced process modules and competing architectures (planar bulk CMOS versus FinFETS), and their impact on analog/RF performance. FinFETs will be shown to be better suited for analog baseband design and to have...
FinFET technology presents a competitive alternative to planar CMOS as it features a better control of the short channel effects. This results in improved digital and analog performances. The radio-frequency (RF) behavior is however affected by a large level of parasitics. In this paper, we explain how technological options and device design affect the FinFET performance. In addition, the challenges...
Solution-processed transparent zinc oxide (ZnO) transistors are demonstrated using a chemical bath deposition process for ZnO deposition. The process is glass compatible and amenable to producing fully transparent electronics. Mobility as high as 3.5 cm2/V ldr s with on-off ratios of ~105 is realized. The transparency of ZnO allows for complete coverage of the pixel by the pixel drive transistors;...
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