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The analytical noise model of HgCdTe focal plane array (FPA) pixel based on capacitive transimpedance amplifier (CTIA) is presented. It allows to evaluate the noise-equivalent power (NEP) and input dynamic range (IDR) of short-wavelength infrared HgCdTe FPA. The noise model takes into account the following noise mechanisms: photodiode shot noise due to fluctuations of the radiation flux and dark current,...
The review of architecture and characteristics of developed 384×288 silicon readout integrated circuit with 25 μm pixel pitch for MWIR and LWIR MCT based FPA is presented. The main characteristics of the ROIC: pixel cell electron capacity > 21 Me−, maximum output pixel rate per one video output 20 MHz, maximum dissipation power < 100 mW.
A kinetic Monte Carlo model of silicon nanocluster (Si-nc) formation during high temperature annealing of Si suboxide layers was suggested. The model takes into account, along with silicon and oxygen atom diffusion, the processes of silicon monoxide creation and dissociation. It was demonstrated that the presence of SiO in the system results in an increase of Si-nc critical nuclear size and can accelerate...
Study of silicon nanocrystal (Si-nc) formation in SiOx layers during high temperature annealing was fulfilled by Monte Carlo simulation. Role of silicon monoxide in the process of cluster nucleation and growth was analyzed. Dependencies of Si-nc size, number of clusters on temperature and annealing time for open and closed systems were obtained. Simulation demonstrated that presence of silicon monoxide...
Simulation of silicon nanocluster formation in SiOx and SiO2-SiO-SiO2 layers after high temperature annealing was carried out. Cluster size distribution depending on temperature and annealing time was obtained. The process of Si 3D island formation during silicon deposition on silicon dioxide substrate was examined. Simulation demonstrated the role of SiO molecule in Si-nc aggregation.
High temperature annealing process of SiOx mixture at equilibrium and non-equilibrium conditions has been studied. Proposed new event-scheduling algorithm takes into account different diffuse and chemical particle activities. Temperature dependence of SiO concentration in the mixture of Si and O atoms (with ratio 1:1) during annealing was determined using this new software. Parameters of chemical...
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