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A unique, experimental analysis is provided on ultra-broad-band noise data for high frequency BJT and FET transistors derived from multiple test setups. These setups include a traditional in-house flicker noise measurement system (to 100kHz), and a new commercially available broad-band low frequency noise measurement system (to 40MHz), along with higher frequency microwave noise figure system (utilized...
A revealing case study is presented to explore the impact of excess noise ratio (ENR) and vector network analyzer (VNA) mechanical coaxial calibration on accurate on-wafer noise parameter testing for ultra-low noise devices. On-wafer noise parameter tests were conducted on a GaAs pHEMT device from 2-50 GHz after calibration with three different noise sources. For each, ENR specified from an external...
A novel empirical thermal modeling technique is proposed to allow improved prediction of channel temperature for GaN HEMT power devices when driven with pulsed DC/RF signals. The proposed thermal model contains a multiple-pole RC network and adapts itself based on the pulse width and duty cycles of the input signals. The model, which is incorporated within an Angelov-based compact non-linear model,...
This paper describes innovative high accuracy models that have been developed for broadband conical inductors, in particular to predict Piconics' SMT conical series (0.22 to 8 uH). Several models are available from Modelithics which include substrate-scalable versions that have been validated against series-connected inductors on a range of substrates and fixed-substrate models for shunt configurations...
An overview is provided of a range of linear and non-linear system level component models with novel features that enable efficient RF front-end design and optimizations. Described are scalable attenuator and LTCC filter models as well as X-parameters-based amplifier models that account for noise and nonlinearities as well as accurate S-parameter predictions. The substrate-scalable LTCC filter and...
A family of LTCC filters were modeled using a substrate-scalable equivalent circuit modeling approach. Modeling using finite-element electromagnetic analysis and physical geometries was also explored. Presented within this paper are model results for example high pass and low pass filters along with a model application example demonstrating how the models can be used for improved layout to compensate...
Commercial foundry 0.25µm RF GaN MMICs were characterized as power switches using pulsed IV system. The devices exhibited current collapse and ON resistance modulation. These trap effects were highly dependent on off state quiescent drain bias voltages. At higher switch voltages, the output power was reduced due increase in the ON resistance and collapse of drain current. Traps located on the surface...
GaN HEMTs are widely used in switching power amplifiers topologies to achieve high power density at very high frequencies due to the enhanced power handling capabilities provided by the SiC substrate and very high transition frequencies of GaN High Electron Mobility Transistors (HEMTs). This paper explores the use of RF GaN HEMTs as power switches in integrated supply modulator topologies. Devices...
RF GaN HEMTs were characterized as power switches using pulsed IV system. The devices exhibited current collapse and ON resistance modulation. These trap effects were highly dependent on off state quiescent drain bias voltages. At higher switch voltages, the output power was reduced due increase in the ON resistance and collapse of drain current. Traps located on the surface between gate and drain...
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