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SiGe FinFET has been explored for its benefit of high current drivability provided by channel strain [1-5]. We have demonstrated SiGe CMOS FinFET at 10nm technology ground rules including epitaxial defectivity control, DC performance and reliability benefit [6-8]. One concern of SiGe FinFET is channel strain relaxation by fin cut process [9] inducing local layout effect (LLE), which is crucial for...
The promise of improved electrostatics and the ability to increase the amount of effective width (Weff) available in a given device footprint drove the semiconductor industry from planar CMOS transistors to the FinFET transistor starting at the 22 nm node [1]. Numerous manufacturers are in large-scale production of 16 and 14 nm node FinFET technologies [2-3] and there is no indication that a change...
It is important to rapidly differentiate infectious bronchitis virus (IBV) from disease agents like highly pathogenic avian influenza virus and exotic Newcastle disease virus, which can be extremely similar in the early stages of their pathogenesis. In this study, we report the development and testing of a real-time RT-PCR assay using a Taqman ® -labeled probe for early and rapid detection...
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