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This work presents an ultra-low power event driven wake-up receiver (WuRx) fabricated in a RF CMOS 130 nm process. The receiver consists of an off-chip lumped element matching network, an envelope detector, a decision circuit capable of detecting sub-mV baseband signal voltages and a clock source consuming 1.3 nW. This receiver has demonstrated a sensitivity of −72 dBm while consuming a total of 8...
In this work, a 500–750 GHz (WM-380) RF micro-electromechanical DC contact switch is realized and reported. This switch is integrated with a 50-Ω coplanar waveguide. The structure is fabricated on high resistivity silicon with top isolation silicon dioxide layer of 100 nm. The switch is electrostatically actuated with a threshold voltage of 60 V. The switch design and calibration are discussed. On-wafer...
This work presents the design, simulation, and fabrication of a 500–750 GHz RF MEMS switch. The switch is designed on a high-resistivity silicon substrate using CPW. Electrostatic force generated by DC bias can actuate the beam to realize conduction or isolation between input and output CPW. HFSS simulations demonstrate that the switch's isolation is 14 dB at 620 GHz and 12 dB at 750 GHz in the OFF...
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