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This paper evaluates the commercially available semiconductor switch technologies for automotive applications. For this purpose, conventional Silicon (Si) Insulated Gate Bipolar Transistor (IGBT) is compared with wide bandgap Gallium Nitride (GaN) and Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Various design aspects of commercially available wide bandgap switches...
New techniques for measuring and analyzing losses in GaN power converters are presented. A 2.4kW synchronous boost converter, switching 300V at 1MHz with normally-off, AlN-base gate, AlGaN/GaN HFETs [1], serves as a vehicle to substantiate the results. An infrared camera is utilized to accurately measure temperatures of the upper and lower switches, as a function of switched current. These temperature...
In this paper, we report recent progress in the development of the fluorine ion implantation (F-implantation) technique for fabricating enhancement-mode (E-mode) GaN heterojunction power transistors. An integrated gate protection technique and a MIS-HEMT technology have been developed in order to improve the device reliability and make the E-mode GaN power transistors more compatible with standard...
We report high performance GaN-based npn heterojunction bipolar transistors (HBTs) grown by metalorganic chemical vapor deposition (MOCVD) with state-of-the-art high collector current density (JC) and low knee voltage (Vknee). For HBTs grown on sapphire, the common-emitter I–V characteristics show high JC > 16 kA/cm2 with an offset voltage (Voffset) of < 0.25V, Vknee < 2.4 V and BVCEO = 105...
Modern switch-mode power supply (SMPS) applications have embraced the benefits realized through the use of gallium nitride (GaN) HEMT technology as it allows switching speeds to increase drastically with respect to silicon parts. Since GaN HEMT devices are a relatively new technology in the power electronics realm, the manufacturing processes have not been perfected to the extent that silicon processes...
Diamond is not only known for being the hardest gemstone but also for being the semiconductor having the highest calculated figures of merit (FOM). This comes from the unique physical properties of this material. Thus, it is predicted that diamond should exceeds silicon carbide (SiC) and galium nitride (GaN) in terms of low loss device and better compromises for on-state resistance versus breakdown...
In this paper the change in on resistance found in GaN HEMTs is discussed. This test was composed to ensure we have a consistent RDS(ON). The interest exists to determine if the efficiency drops due to conduction losses and ensure the longevity of the part [1]. The EPCs 2015 HEMTs were tested in a buck converting configuration under a 10A load. RDS(ON) of MOSFETs directly impact converter efficiency...
We report an Ohmic contact process using TiSi2 electrodes for contact metals on AlGaN/GaN structures. TiSi2 films have been formed by cyclic deposition of Ti and Si layers by sputtering and annealing. Cross-sectional TEM image of the sample annealed has revealed a formation of an interfacial layer above AlGaN layer, however, no intrusion of Ti or Si atoms has been observed at dislocation. Specific...
An original method to accurately evaluate the MOS interface state density has been proposed. Characterization using this method has revealed that a high density of fast states is generated by interface nitridation of SiC(0001), though the density of slow interface states can be remarkably reduced by the nitridation. The generation of fast states is less pronounced on non-basal planes of SiC, and high...
Electrical properties of two-dimensional hole gas (2DHG) at GaN/Al0.23Ga0.77N heterointerface have been investigated. Existence of 2DHG at the interface is confirmed by capacitance-voltage and Hall Effect measurement. We have discussed transport mechanism of 2DHG by comparison with hole generated by conventional Mg impurity, based on experimental evaluations by X-ray diffraction, transmission electron...
Industry's first 600-V GaN-on-Si switching transistors have passed qualification based on Jedec standards and entered commercial market. Although far from being optimized, these 1st generation GaN devices exhibit properties superior to matured Si counterparts including lower on-resistance, much reduced input/output charges, and much higher switching speed. Application examples show significant loss...
Vertical diodes have been fabricated on low defect density bulk GaN substrates. The devices demonstrate performance near theoretical limits for on-state resistance at a given rated breakdown voltage, based on GaN material properties. Breakdown voltage up to 3.7 kV has been measured. Measurements reveal robust avalanche breakdown, critical in an inductive circuit environment. Measurement of switching...
A 1 cm × 1 cm 4H-SiC N-IGBT exhibited a blocking voltage of 20.7 kV with a leakage current of 140 µA, which represents the highest blocking voltage reported from an MOS semiconductor power switching device to date. The device showed a VF of 6.4 V at an IC of 20 A, and a differential Ron,sp of 28 mΩ-cm2. Temperature insensitive on-state characteristics were demonstrated. Switching measurements with...
Gallium Nitride (GaN) transistors will be used in converters connected to the 28V DC bus of modern aircrafts. Since the actual technology of GaN transistors deals with relatively low current (lower than 25A), a way to increase the power of converters is to either directly parallel the transistors or to parallel the commutation cells. In both approaches, accurate switching losses of the GaN transistor...
SiNx-passivated AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrates demonstrated high tolerance to 2 MeV proton irradiation, up to a dose of 6 × 1014 cm−2. Radiation-induced changes were observed in Hall mobility, two-dimensional electron gas sheet carrier density, sheet resistance, ON-resistance, transconductance, threshold voltage, and dynamic ON-resistance. Dynamic ON-resistance...
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