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Vertical diodes have been fabricated on low defect density bulk GaN substrates. The devices demonstrate performance near theoretical limits for on-state resistance at a given rated breakdown voltage, based on GaN material properties. Breakdown voltage up to 3.7 kV has been measured. Measurements reveal robust avalanche breakdown, critical in an inductive circuit environment. Measurement of switching...
Industry's first 600-V GaN-on-Si switching transistors have passed qualification based on Jedec standards and entered commercial market. Although far from being optimized, these 1st generation GaN devices exhibit properties superior to matured Si counterparts including lower on-resistance, much reduced input/output charges, and much higher switching speed. Application examples show significant loss...
In this paper, we describe 600 V GaN high electron mobility transistors (HEMTs) technologies on a 6-inch Si substrate using an Au-free Si-LSI mass production line. Metal insulator semiconductor (MIS) HEMTs were fabricated using AlN as a gate insulator. The AlN layer was deposited by thermal atomic layer deposition (ALD) method using the mass-production-type vertical reactor which was capable for over...
This paper presents the design of a 90 W isolated Quasi-Switched-Capacitor (QSC) DC/DC converter, serving as the DC/DC stage for AC/DC adapters. The converter employs a QSC DC/AC circuit and 2 different rectifier circuits, which are a synchronous-rectifier, current-doubler (SRCD) circuit and a synchronous-rectifier, center-tapped (SRCT) circuit. Compared to Flyback and LLC resonant converters, the...
Energy efficiency of typical data centers is less than 50% where more than half of the power is consumed during power conversion, distribution, cooling, etc. In this paper, a single power stage architecture that converts 400 V directly to 1 V is discussed. Input series and output parallel structure (ISOP) is selected due to the high input voltage and large output current operation condition. Phase...
The overall power system can generally be divided into three stages: front end, middle stage and point-of-load (POL). The overall efficiency of the power supply chain is dependent on the multiplicity effect which means each stage should be taken into account. Increases in efficiency of the POL converter have the benefit of reducing extra heat generation near the load, reducing overall power dissipation,...
Ultrahigh voltage SiC bipolar devices more than 13 kV were developed, and their package technology was investigated. As a result, we have succeeded in creating a 13kV level PiN diode without forward voltage degradation by using 4° off substrates and a 15kV p-channel IGBT with a low differential specific on-resistance (Rdiff,on) at high temperature. Moreover, the results reveal that the nano-tech resin,...
A 1 cm × 1 cm 4H-SiC N-IGBT exhibited a blocking voltage of 20.7 kV with a leakage current of 140 µA, which represents the highest blocking voltage reported from an MOS semiconductor power switching device to date. The device showed a VF of 6.4 V at an IC of 20 A, and a differential Ron,sp of 28 mΩ-cm2. Temperature insensitive on-state characteristics were demonstrated. Switching measurements with...
Excellent Silicon Carbide (SiC) material properties make SiC JFETs extremely attractive for high power density and high frequency power applications, as well as for circuit protection functions. The absence of a gate oxide and internal parasitic devices allows the device to operate especially well at high temperatures. The vertical current flow design of trench JFETs lead to near ideal specific on-resistance...
We propose a criterion to quantify the relationship between buffer layer parameters at a given total charge and turn-off speed for 4H-SiC IGBTs. Three phases of voltage ramp are analytically discussed during the inductive load turn-off by solving each corresponding continuity equation. Extra emphasis will be placed on Phase II - a transition phase in between the initial voltage ramp and punch-through.
This paper presents a critical comparison of static and switching performance of commercially available 1.2 kV SiC BJTs, MOSFETs and JFETs with 1.2 kV Si IGBTs. The experiments conducted are mainly focussed on investigating the temperature dependence of device performance. As an emerging commercial device, special emphasis is placed on SiC BJTs. The experimental data indicate that the SiC BJTs have...
This paper presents a 1200 V, 120 A SiC MOSFET phase-leg module capable of operating at 200 °C ambient temperature. Paralleling six 20 A MOSFET bare dice for each switch, this module outperforms the commercial SiC modules in higher operating temperature and lower package parasitics at a comparable power rating. The module's high-temperature capability is validated through the extensive characterizations...
Analog and digital integrated circuits capable of operating reliably at 300 °C for 2000 hours were designed and fabricated in silicon carbide. These circuits are critical for the development of tools and instrumentation for geothermal exploration. Lateral MOSFETs and resistors were built on Si-face, 4°-off, N+ 4H-SiC substrates. Compact models of these devices were then generated and used to design...
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