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Many intelligent gate drivers being designed for new state-of-the-art WBG devices typically only focus on protection and driving capabilities of the devices. This paper introduces an intelligent gate driver that incorporates online condition monitoring of the WBG devices. For this specific case study, three timing conditions (turn-off delay time, turn-off time, and voltage commutation time) of a silicon...
This paper investigates the failure mechanism of SiC power MOSFETs during avalanche breakdown under unclamped inductive switching (UIS) test regime. Switches deployed within motor drive applications could experience undesired avalanche breakdown events. Therefore, avalanche ruggedness is an important feature of power devices enabling snubber-less converter design and is also a desired feature in certain...
Silicon Carbide (SiC) MOSFET power module has become commercially available in the past few years, and it is attractive in solid state transformers (SSTs) applications to replace Silicon (Si)-based IGBTs. This paper is focused on the efficiency comparison between a SiC MOSFET-based three-port active bridge converter (TAB) and a Si IGBT-based approach. The efficiency of the overall system, being one...
The doping of the drift layer of a 1-D SiC power device is designed to vary in steps, instead of traditional constant doping, and we show an experimental reduction of the resistance of the drift region below that achieved with constant doping by 7.34%. Sensitivity of doping design to material properties affects the improvement in characteristics. Stepped epitaxial doping presented here permits shrinkage...
This paper presents a comparison of the inductive switching losses between a 1200 V SiC MOSFET half bridge power module with anti-parallel SiC schottky barrier diodes (SBD) versus the same power module package utilizing only the intrinsic body diode of the SiC MOSFETs. SBDs can significantly reduce switching losses by reducing the reverse recovery losses experienced during hard-switching events. However,...
This paper presents a 600 V, 55 mS GaN cascode with slew rate control. The time constants of cascodes which determine the switching speed are analyzed, discussed and verified by time domain simulations. Clamped inductive switching measurements of commercial and a custom-built GaN cascodes prove the applicability of the switching speed control mechanisms with additional passive components. The gathered...
Gallium Nitride (GaN) transistors are of great interest for pulsed power and high power applications due to the proven capability of Silicon Carbide (SiC) transistors. Due to recent advances in GaN power semiconductors, lateral GaN transistors need to be evaluated for their performance under repetitive pulsed overcurrent operation that can occur in power electronics or pulsed power applications. A...
Vertical GaN Junction barrier Schottky (JBS) diodes are fabricated on hydride vapor phase epitaxy (HVPE) GaN substrates. The p-type JBS gridded regions were formed by selective area doping by Mg ion implantation followed by an activation anneal. Implantation was performed into a 10 μm thick unintentionally doped GaN layer grown by metal organic chemical vapor deposition (MOCVD). Evaporating Pd/Au...
This paper presents a methodology for modelling of multichip Silicon Carbide (SiC) power modules where multi-domain effects (electrical, thermal, and electromagnetic) in the power module can be accurately observed with minimal computational cost. Commercially available numerical analysis software are capable of showing these effects but there is currently no commercially available software package...
In this paper we demonstrate the performance and reliability of 1200V SiC DMOSFETs manufactured in a high volume 150mm Si CMOS foundry. These DMOSFETs exhibit less than a 10% shift in threshold voltage and practically no change in breakdown characteristics after high temperature stress tests at 175°C. The performance of very large area 6.30 × 9.45mm2, 11mΩ SiC DMOSFETs prove that device scaling is...
In this paper, a comprehensive evaluation work on 1.7 kV SiC Super Junction Transistor (SJT) power module and 1.7 kV SiC MOSFET power modules is presented. Both device static and dynamic performance is extracted and compared at wide device current range and temperature range. The data presented in this paper can be used as input for medium voltage power conversion system power transistor selection,...
This paper presents the design, fabrication and testing of a 1.2 kV, 90 A SiC MOSFET half-bridge module in synchronous configuration. The module has low gate- and power-loop parasitic inductances, and has more than twice the power density (127.8 W/in3), and less than half of the switching loss (1.3 mJ), as similarly-rated commercial half-bridge modules, while employing standard, cost-effective packaging...
This paper presents a comparison study of three isolated DC/DC circuit topologies, LLC resonant circuit, phase shift bridge circuit and phase shift quasi switched capacitor (QSC) circuit. The device stress of three circuits is compared using total switching device power (SDP) which can be used as an indicator of circuit efficiency, device cooling requirement, device packaging requirement and cost...
This paper reports on the comparison of AlGaN/GaN heterostructure field-effect transistors (HFETs) with multi-level metallization structures and conventional metallization. The epitaxial structures were grown on a 150-mm Si substrate. Photosensitive polyimide (PSPI) was used for a patterned inter-metal dielectric (IMD) layer of multi-level metallization. Maximum drain current of the HFETs with the...
The physical mechanism of fin-shaped tri-gate AlGaN/GaN Metal Insulator Semiconductor High Electron Mobility Transistors (Fin-MISHEMT) with Al2O3 gate oxide is studied with theoretical model derived and TCAD simulation verified. The relationship between its threshold voltage and fin-width is obtained. The theoretical model of the depletion effect of side gates is based on a two-dimensional Poisson...
This paper presents static and dynamic characterization of 100V and 650V Gallium Nitride power transistor from root temperature to 150°C, and a physical explanation of the device on-resistance behavior at elevated temperature was provided. This device physics-based understanding would benefit those application engineers who selects GaN HEMT power transistor to design a robust and energy efficient...
The first high voltage Gallium Nitride (GaN) switches to appear in the market were based on depletion-mode HEMT (dMode FET) technology. This requires either a complex gate driver to manage the negative threshold or a low voltage FET in cascode configuration. The lack of direct control of the GaN switch and the need for expensive multichip packaging has delayed the adoption of GaN power stage in off-line...
This paper presents switching operation of a monolithically integrated half-bridge stage in a 600 V-class GaN-on-Si technology. The integrated power chip includes two high performance GaN-HEMTs with integrated freewheeling Schottky diodes, on a total chip area of 4×4 mm2. Operation of the half-bridge chip is demonstrated in a soft-switching buck converter at switching frequencies up to 3 MHz, input...
A DC-DC boost converter is fabricated using a SiC MOSFET and the characteristics are analyzed with SPICE simulation. We use a device model based on surface potential for SiC MOSFET, which was proposed this year by our group. It is found that the SPICE simulation well explains the experimental waveforms of the fabricated boost converter even at very high frequencies of 1–5 MHz. This result suggests...
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