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In this work, a novel high performance 10 kV / 240 A silicon carbide (SiC) metal-oxide field-effect transistor (MOSFET) power module design is presented. The key features for this power module include reworkability, low parasitic design, low thermal resistance design, equal current sharing of high voltage power MOSFETs, and low profile and small form factor. The design tradeoffs to achieve these characteristics...
High-current, large-area single SiC JBS diodes rated at 650V-200A and 1200V-100A were fabricated on a 150mm platform that demonstrate a low VF of 1.5V. The diodes exhibit a specific differential resistance, Rdiff, sp, of 0.74 and 1.65 mΩ-cm2, respectively. The devices were tested with similarly rated Si-IGBTs and the reduction in switching losses and QRR evaluated. The high-current diodes have also...
SPICE modeling of silicon carbide (SiC) MOSFET based on the advanced mobility model has been carried out. This modeling employs the SPICE level-1 model of MOSFET, but the constant mobility in the piecewise current equations has been replaced by the advanced mobility expressions, which can exactly reflect the effect of SiC/SiO2 interface traps on the electrical characteristics of 4H-SiC MOSFET. Key...
This paper investigates the advantages of combining press-pack packaging and SiC MOSFETs to extend the application of SiC devices into the high power range. The feasibility of press-pack packaging on SiC MOSFET is illustrated by using extremely small and flexible contact pins called "fuzz buttons" in a low-profile interposer. The layout of the press-pack is designed to have very low main...
A 3-D stacked wire bondless silicon carbide (SiC) power module is proposed to achieve high voltage and current specification. The proposed 3-D stack consists of stand-alone wire bondless power modules stacked on top of each other with a novel interconnection scheme. Each stand-alone wire bondless power module has two SiC power devices connected in parallel to increase its current handling capability...
In this paper, a comprehensive evaluation work on 1.7 kV SiC Super Junction Transistor (SJT) power module and 1.7 kV SiC MOSFET power modules is presented. Both device static and dynamic performance is extracted and compared at wide device current range and temperature range. The data presented in this paper can be used as input for medium voltage power conversion system power transistor selection,...
With the rapid development of wide bandgap power transistor technology, the latest gallium-nitride based power transistors are able to be used as the main switches in the high power (≥10 kW) conversion systems. In order to achieve the desired high efficiency and higher power density successfully, the entire GaN based power conversion system needs to take multiple considerations into the design stage...
This paper presents the results of the development and use of a full bridge GaN high electron mobility transistor (HEMT) converter used in an inductive power transfer (IPT) application. Experimental results using a Si MOSFETs converter in an IPT setup has previously been reported. By using GaN HEMTs instead of Si MOSFETs, the converter efficiency can be increased over a broad range of operating points...
This paper presents a comparison study of three isolated DC/DC circuit topologies, LLC resonant circuit, phase shift bridge circuit and phase shift quasi switched capacitor (QSC) circuit. The device stress of three circuits is compared using total switching device power (SDP) which can be used as an indicator of circuit efficiency, device cooling requirement, device packaging requirement and cost...
This paper presents the analyses and design of a GaN device based differential-mode Cuk inverter (DMCI). The DMCI follows a hybrid modulation scheme (HMS) that introduces discontinuity in modulation or yields topological switching, which results in enhanced energy conversion efficiency. Owing to very small device capacitance and high dv/dt of GaN devices, it becomes crucial to limit the leakage inductance...
This paper presents the design, fabrication and testing of a 1.2 kV, 90 A SiC MOSFET half-bridge module in synchronous configuration. The module has low gate- and power-loop parasitic inductances, and has more than twice the power density (127.8 W/in3), and less than half of the switching loss (1.3 mJ), as similarly-rated commercial half-bridge modules, while employing standard, cost-effective packaging...
Recently, flying capacitor multi-level (FCML) converters with GaN power switches have received increased attention due to their potential to achieve high efficiency and high power density. However, one of the major challenges is providing power to the gate drive circuits, most of which are not ground referenced. The most common existing method utilizes isolated DC/DC converters, which are bulky, expensive...
This work proposes a solution for an isolated gate driver for SiC MOSFETs, based on a magnetic transformer that simultaneously provides to the secondary side the turn-on and turn-off gate signals and the power required for an adequate gate control. This avoids the use of a dedicated DC-DC isolated converter and optocoupler. The original pulse signal is converted into impulses, avoiding transformer...
This paper focuses on performance evaluation of direct drive high voltage Gallium-Nitride (GaN) devices in a high frequency LLC series resonant converter (LLC-SRC). A comparison between synchronous drive and direct drive high voltage (HV) Cascode GaN device has been made. Zero reverse recovery charge and integrated protections make direct drive HV Cascode GaN device attractive to high frequency LLC-SRCs...
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