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This paper investigates the concept of using depletion-mode n-channel MOSFET (D-MOS) as RF transmitter/receiver switch. A new TCAD modeling methodology to analyze large-signal GHz-range T/R operation of MOS transistors is developed. The D-MOS offers a significant reduction in RON and COFF over the widely used enhancement-mode MOSFET (E-MOS). An excellent figure of merit (RON×COFF) of 134 fs can be...
An analytical charge-sheet drain current model for monolayer transition metal dichalcogenide negative capacitance field-effect transistors (TMD NC-FETs) is proposed by solving the Schrodinger’s equation, the Pao-Sah current formulation, and the Landau-Khalatnikov equation. Results predicted by the developed analytical model agree well with the experimental data. An amplified semiconductor surface...
To evaluate electromigration (EM) reliability of solder/copper (Cu) pillar bumps, a simple and lowcost test method using a flat cable has been developed. The EM lifetime of the pillar bumps with differently plated structures or different plating chemicals were compared. The results show the different lifetime distributions depending on the different structures or plating chemicals. From the results,...
In this work, online training is experimentally demonstrated on a neuromorphic network built with 1k-bit 1T1R RRAM array. The 1T1R RRAM cells in the array exhibit excellent synaptic behavior. Patterns with up to 11.83% noises can be correctly classified by the network after training. Based on the analysis of experimental results, we find the device characteristics and operation schemes significantly...
This paper systematically analyzed and optimized the operation parameters of low current 1T1R RRAM arrays. Considering both thermal and electrical field driven effects, a current and voltage joint verification strategy has been proposed. Highly uniform multilevel resistive switching performances with LRS resistance higher than 100kΩ and HRS resistance higher than 10MΩ were obtained on 130nm CMOS process...
It is important to analyze and understand the soft error rate (SER) scaling and trends when selecting a technology node and process for a product that needs to meet robust SER requirements. In this paper the SER scaling and trends normalized to FITs/Mb in planar sub-micron nodes from 90nm to 20nm are analyzed and discussed. This paper discusses and presents the SER scaling based on normalized FITs/Mb...
Spin accumulation in a Si channel using CoFe/MgO/Si spin injectors is investigated. Hanle-effect signals from spin-polarized electrons accumulated in the Si channel are observed using three-terminal spin-accumulation (3T-SA) devices with the spin injectors. The Hanle-effect signals are decomposed into two components, i.e., channel-spin and trap-spin components. The proportion of the channel-spin component...
A new theory has been developed for geometric variation of trigate FinFETs. This geometric variation includes both line roughness induced variation and oxide-thickness variation, which can be measured from gate capacitance and Ig current variations, respectively. Experimental results show that trigate devices are subject to serious line variations as the fin height scales up and the fin-width scales...
A new monitoring device records positive/ negative charging effects in FinFET BEOL plasma processes through polarity direction scheme is first-time proposed. This charge splitting in-situ recorder (CSIR) is composed of separate floating gates to independently detect ion charging and electron charging effects. Through this on-chip charge directing structure, the separation of positive or negative plasma...
This study aims to develop a precision sensor to realize a real-time measurement system for ground motion or dynamic behaviors of large structures. The proposed sensor uses optical interferometry that requires no electric power, which has an advantage of long-term measurement. This paper describes an experimental study of a MEMS vibration sensor. The result shows that the sensor is able to measure...
Oxidation mechanism and passivation of Ge surface by ozone is experimentally investigated. The GeOx oxidation process contains two regions: initial linear growth region and following parabolic growth region. The linear growth region contains reaction of oxygen atoms with surface bond and back bonds of outmost Ge layer. The parabolic growth region starts when the oxygen atoms diffuse into back bonds...
Helium ion microscopy (HIM) was applied to image an organic film filled into narrow trenches. The film was characterized to examine structural changes after the HIM helium ion irradiation comparing with a SEM electron beam irradiation. In the HIM case, the change was seen in a deep region of the film, while it occurred at the surface in the SEM case. This depends on penetration properties of helium...
This paper describes a cleanroom-less device fabrication process of a minimal fab including an in-line photomask fabrication process, where half-inch wafers and half-inch photomasks are transferred in airtight containers and loaded into fabrication tools to prevent invasion of air-borne particles, gases and UV light from outside. Photomasks are fabricated using a maskless exposure system in the minimal...
Semiconductor assembly process has been improved by wafer level packaging (WLP) introduction in high volume manufacturing. Cu-Redistribution layer (RDL) miniaturization is one of key process for small, thin and light chip manufacturing. Development of high resolution and transmittance control of photoresist is required to this technology realization on topology substrate. Photoresist development with...
We investigate crystallinity of sputtered MoS2 films formed in various sputtering conditions to enhance the migration. We found that high substrate temperature, high radio frequency (RF) power and long throw were effective for crystallinity improvement of sputtered MoS2 films and in these conditions higher Hall-effect mobility of 12 cm2/V-s and lower carrier density of 1018 cm−3 were achieved.
In general, an insulating film of SiC MOSFET is SiO2 formed by thermal oxidation of SiC. This SiO2 film has many defect structures which induce much larger threshold voltage shift. In this paper, we investigated the defect formation of an oxygen vacancy in SiO2 by SiC thermal oxidation, using the first-principles calculations, and we found that the oxygen vacancy defect can be generated in the amorphous...
Supercritical fluid deposition (SCFD), which utilizes the oxidation/reduction of organic compounds in supercritical CO2 (scCO2), is a promising thin film process for the fabrication of 3-dimenotional (3D) structure due to its conformal deposition capability on high aspect ratio features with moderate growth rate. In this work, SCFD was used to fabricate a conformally-stacked RuO2/TiO2/RuO2 structure...
In this paper, growth and fabrication of enhancement mode InGaN (5nm)/AlGaN (35nm)/ GaN (1.8 μm) HEMT is presented through focused ion beam (FIB) lithography technique for different alloy material as a source/drain contact. The X-TEM, AES, AFM has been done of the metal deposited surfaces and DC characterization reveals threshold voltage of 1.2 V.
We have fabricated ultra-narrow (sub-10 nm) short channel (100 nm) silicon (Si) nanowire transistors with atomically flat interfaces based on Si-on-Insulator (SOI) substrates. The raised source and drain electrodes were patterned together with the gate electrode. The smaller threshold voltage in the narrower nanowire suggests self-limiting oxidation during the gate oxide formation.
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